Allicdata Part #: | FGH75N60UFTU-ND |
Manufacturer Part#: |
FGH75N60UFTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 600V 150A 452W TO247 |
More Detail: | IGBT Field Stop 600V 150A 452W Through Hole TO-247 |
DataSheet: | FGH75N60UFTU Datasheet/PDF |
Quantity: | 4 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Power - Max: | 452W |
Supplier Device Package: | TO-247 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Test Condition: | 400V, 75A, 3 Ohm, 15V |
Td (on/off) @ 25°C: | 27ns/128ns |
Gate Charge: | 250nC |
Input Type: | Standard |
Switching Energy: | 3.05mJ (on), 1.35mJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.4V @ 15V, 75A |
Current - Collector Pulsed (Icm): | 225A |
Current - Collector (Ic) (Max): | 150A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | Field Stop |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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FGH75N60UFTU is a field effect transistor (FET) that belongs to the family of insulated gate bipolar transistors (IGBTs). This type of transistor is characterized by a wide range of current and voltage ratings, as well as fast switching times. It is popularly used in power conversion and motor control applications, where high power efficiency and precise control is required. As with many other types of IGBTs, FGH75N60UFTU is also typically used as an isolator in circuits, since it has the ability to easily switch between on/high and off/low states with minimal power losses.
The FGH75N60UFTU series is a single insulated gate bipolar junction transistor (S-IGBT) that offers a very wide range of operating voltages, from 600V to 1900V, and a continuous current rating of up to 300A (in a non-pulsed mode). The device has a high junction temperature rating of 175 degrees Celsius, and an optimized gate charge/discharge time of 40ns/40ns. It is also designed to have low switching losses, making it suitable for high efficiency motor control and power conversion applications.
A single-IGBT FGH75N60UFTU device has a structure consisting of two opposing PN-doped layers that are separated by an insulating layer. A gate terminal is placed between the two layers, and when the gate is charged, it allows electrons to move freely between the two layers. This, in turn, allows current to flow in both directions, which is the basic principle that allows the single FGH75N60UFTU to turn on or off. In applications such as motor control, this ability to precisely switch between on/off states with minimal power losses makes single-IGBTs very desirable.
In addition to motor control and power conversion applications, FGH75N60UFTU single-IGBTs can also be used for other applications such as light dimming, HVAC control, and more. The device is very durable and easy to integrate into existing circuits, allowing for higher efficiency and flexibility the engineering design. Due to its wide range of voltage and current ratings, as well as its fast switching times and low capacitance, it is well suited for applications that require additional power, precise control, and/or efficiency.
The FGH75N60UFTU is a single-IGBT that provides excellent performance and is suited for a wide variety of applications including motor control, power conversion, and light dimming. With its high operating voltages, fast switching times, and low capacitance, it is an ideal choice for applications that require additional power, precise control, and efficiency. As this device is very durable and easy to integrate in existing circuits, it is widely used in modern engineering designs.
The specific data is subject to PDF, and the above content is for reference
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