FGH75T65SQDTL4 Allicdata Electronics
Allicdata Part #:

FGH75T65SQDTL4-ND

Manufacturer Part#:

FGH75T65SQDTL4

Price: $ 4.94
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: 650V FS4 TRENCH IGBT
More Detail: IGBT Trench Field Stop 650V 150A Through Hole TO-...
DataSheet: FGH75T65SQDTL4 datasheetFGH75T65SQDTL4 Datasheet/PDF
Quantity: 1000
1 +: $ 4.48560
10 +: $ 4.05090
100 +: $ 3.35355
500 +: $ 2.92023
1000 +: $ 2.54342
Stock 1000Can Ship Immediately
$ 4.94
Specifications
Input Type: Standard
Supplier Device Package: TO-247
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 76ns
Test Condition: 400V, 18.8A, 15 Ohm, 15V
Td (on/off) @ 25°C: 44ns/276ns
Gate Charge: 128nC
Series: --
Switching Energy: 307µJ (on), 266µJ (off)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Current - Collector Pulsed (Icm): 300A
Current - Collector (Ic) (Max): 150A
Voltage - Collector Emitter Breakdown (Max): 650V
IGBT Type: Trench Field Stop
Part Status: Active
Description

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The FGH75T65SQDTL4 IGBT is a special type of transistor device, broadly referred to as Insulated Gate Bipolar Transistors (IGBTs). IGBTs are commonly used in applications like motor and lighting control, switching, and power conversion. In particular, the FGH75T65SQDTL4 model is a single-channel type of IGBT, which is a particular type of power transistor that combines elements of both metal-oxide-semiconductor field-effect transistors (MOSFETs) and bipolar junction transistors (BJTs) together into one component.

At the most basic level, an IGBT is a voltage-controlled power switch. When forward-biased (or when a positive current is passed through it), the IGBT will be on, and when reverse-biased (a negative current is passed through it), it will be off. This voltage control makes the IGBT ideal for controlling larger loads such as motors, heat pumps, and other devices with transistors. In addition, the FGH75T65SQDTL4 IGBT is also an ideal choice for switching applications due to its high switching speeds and low on-state resistance.

The FGH75T65SQDTL4 IGBT works by utilizing the power of MOSFETs and BJTs in tandem. MOSFETs are naturally good in terms of switch control and low on-state power consumption, while BJTs are good at taking on the high current and voltage of a much larger load. By combining the two, it allows for efficient power conversion that is resistant to switching noise.

The FGH75T65SQDTL4 IGBT also uses advanced design techniques to minimize its on-state voltage drop and increase its power efficiency. This is achieved by allowing the IGBT to have a faster turn-off time, enabling faster switching speeds and reducing the time spent in the high power/voltage state. This feature is also useful in reducing switch losses. The device also has a self-contained integrated snubber parallel MOSFET, which is essential for suppressing the turn-off overshoot that is created on high power IGBTs.

In summary, the FGH75T65SQDTL4 IGBT is a single-channel type of power transistor, which combines elements of both the MOSFETs and the BJTs. It is mainly used for switching and controlling power and has a variety of features that enable it to perform this task efficiently and reliable. The IGBT is also equipped with advanced design features that effectively minimize power loss as well as suppress switch overshoot. The FGH75T65SQDTL4 is a great choice for applications in motor and lighting control, switching, and power conversion.

The specific data is subject to PDF, and the above content is for reference

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