| Allicdata Part #: | FGH75T65SHD-F155-ND |
| Manufacturer Part#: |
FGH75T65SHD-F155 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | IGBT 650V 150A 455W TO-247 |
| More Detail: | IGBT Trench Field Stop 650V 150A 455W Through Hole... |
| DataSheet: |  FGH75T65SHD-F155 Datasheet/PDF |
| Quantity: | 185 |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Series: | -- |
| Packaging: | Tube |
| Lead Free Status / RoHS Status: | -- |
| Part Status: | Active |
| Moisture Sensitivity Level (MSL): | -- |
| IGBT Type: | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max): | 650V |
| Current - Collector (Ic) (Max): | 150A |
| Current - Collector Pulsed (Icm): | 225A |
| Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 75A |
| Power - Max: | 455W |
| Switching Energy: | 2.4mJ (on), 720µJ (off) |
| Input Type: | Standard |
| Gate Charge: | 123nC |
| Td (on/off) @ 25°C: | 28ns/80ns |
| Test Condition: | 400V, 75A, 3 Ohm, 15V |
| Reverse Recovery Time (trr): | 43.4ns |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247 Long Leads |
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FGH75T65SHD-F155 is a Single IGBT, which integrates a full-silicon MOS (Metal-Oxide Semiconductor) structure and an NPN bipolar junction transistor. It is a highly reliable power semiconductor device that has an extremely wide application field.
Its application field mainly includes low voltage AC and DC switching, as well as medium power inverter applications. It is often used in inverter motor control, power clamp circuits, power factor correction, power conversion, motor control, etc. FGH75T65SHD-F155 is especially suitable for light-load applications, which require switching operations with low energy consumption and low heat dissipation. It can also be used in solar inverters and UPS systems.
The working principle of FGH75T65SHD-F155 involves the use of two components: an NPN bipolar junction transistor and a full-silicon MOS structure. The NPN bipolar junction transistor works as a switch by controlling the gate voltage. The gate voltage is then used to control the flow of current through the lower-temperature semiconductor layer, which is transferred onto the silicone layer. This allows current to flow through the power applications with ease.
The FGH75T65SHD-F155 is generally easier to install and operate than other IGBTs. Its superior performance, high reliability and wide application field make it a cost-effective solution for industrial applications. Its high switching speed and lower intrinsic capacitance also increase its efficiency, meaning it can operate more efficiently than other systems.
Overall, the FGH75T65SHD-F155 Single IGBT is a highly reliable and efficient semiconductor device that has a wide application field. Its superior features and performance make it an ideal choice for many power applications and operations. Its lightweight design and easy installation also make it an attractive option for those looking to find a cost-effective solution to their power applications.
The specific data is subject to PDF, and the above content is for reference
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