FGH75T65SQD-F155 Allicdata Electronics
Allicdata Part #:

FGH75T65SQD-F155-ND

Manufacturer Part#:

FGH75T65SQD-F155

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 650V 150A 375W TO247
More Detail: IGBT Trench Field Stop 650V 150A 375W Through Hole...
DataSheet: FGH75T65SQD-F155 datasheetFGH75T65SQD-F155 Datasheet/PDF
Quantity: 20
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 20Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 150A
Current - Collector Pulsed (Icm): 300A
Power - Max: 375W
Switching Energy: 760µJ (on), 180µJ (off)
Input Type: Standard
Gate Charge: 128nC
Reverse Recovery Time (trr): 43ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
Description

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The FGH75T65SQD-F155 IGBT (Insulated Gate Bipolar Transistor) is a single component designed to handle voltage ratings of up to 1500 volts while providing a low on resistance. This particular component was designed to switch high current in a medium or high power application, making it an ideal solution for designers who need a complex and high-performance component.

Application Field

The FGH75T65SQD-F155 is an ideal component for use in a range of industrial, commercial, and consumer applications. These applications include motor control, UPS (uninterruptible power supply), lighting and e-bikes, electric vehicles, welding, communications systems, and solar inverters, as well as other industrial and consumer control systems.

The component\'s high-voltage and low on-resistance ratings make it perfect for use in a range of applications, as it can safely and accurately switch signals without generating much noise. Its high-performance features make it a top choice for demanding power applications, with its continuous current rating of 75A and a peak current of 155A.

Working Principle

The FGH75T65SQD-F155 is a member of a family of IGBTs with a similar working principle. It works by combining the features of a bipolar junction transistor (BJT) and a MOSFET (metal–oxide–semiconductor field-effect transistor) to offer superior switching performance across a wide range of applications. It is composed of two isolated components; the gate and the collector, which are connected by a channel in the middle.

The gate is the controlling part of the component and its openings and closings activate and deactivate the current through the channel. This is done by connecting to the positive and negative voltage sources, as well as the load resistor. The load resistor is the component that directly receives the current through the channel.

When the gate is open, current will flow from the positive to the negative voltage sources. When the gate is closed, the current is blocked from flowing through the channel. This allows the component to regulate the current entering the load resistor and preventing any overloading.

The FGH75T65SQD-F155 is capable of withstanding high voltages and offers excellent performance when switching high-current signals in a few nanoseconds. The component\'s ability to quickly switch between high and low states makes it an ideal solution for any power application.

The specific data is subject to PDF, and the above content is for reference

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