FGH75T65SQDT_F155 Allicdata Electronics
Allicdata Part #:

FGH75T65SQDT_F155-ND

Manufacturer Part#:

FGH75T65SQDT_F155

Price: $ 2.88
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: 650V FS4 TRENCH IGBT
More Detail: IGBT Trench Field Stop 650V 150A 375W Through Hole...
DataSheet: FGH75T65SQDT_F155 datasheetFGH75T65SQDT_F155 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
450 +: $ 2.61888
Stock 1000Can Ship Immediately
$ 2.88
Specifications
Switching Energy: 300µJ (on), 70µJ (off)
Supplier Device Package: TO-247-3
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 76ns
Test Condition: 400V, 18.8A, 4.7 Ohm, 15V
Td (on/off) @ 25°C: 23ns/120ns
Gate Charge: 128nC
Input Type: Standard
Series: --
Power - Max: 375W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Current - Collector Pulsed (Icm): 300A
Current - Collector (Ic) (Max): 150A
Voltage - Collector Emitter Breakdown (Max): 650V
Moisture Sensitivity Level (MSL): --
IGBT Type: Trench Field Stop
Lead Free Status / RoHS Status: --
Part Status: Active
Description

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An FGH75T65SQDT_F155 is a type of Insulated Gate Bipolar Transistor (IGBT) that belongs to the single range. This class of IGBTs is marked by their active region carrying a single transistor where one port is assigned as an n-type and the other as a p-type. As such, they are aptly suited for switching applications, as they are able to turn off and on very quickly due to their active region.

Specifically, the FGH75T65SQDT_F155 is a high voltage and high speed IGBT, meaning they have vast potential use cases. With a breakdown voltage of 1500V and 10A collector current, it’s best suited to applications that require a large current to be driven at a high voltage. Common applications of this product include welding, uninterruptible power supplies, air conditioning, solar energy conversion, or electric vehicle drives.

The FGH75T65SQDT_F155 has several special features that make it unique in comparison to other IGBTs. For example, its low static losses, low turn-on losses and high surge current withstand capability mean that it operates more efficiently, especially when it is driven with high-frequency control signals. Additionally, the FGH75T65SQDT_F155 utilizes a rapid recovery diode for reverse energy dissipation, minimizing the effect of the diode spikes.

The working principle of the FGH75T65SQDT_F155 is quite simple. When the gate of the IGBT is turned on, a current called the gate current is allowed to flow through the gate and into the base of the device. This causes the junction between the n-type and p-type areas to become conductive, allowing a larger current to flow through the device. The more current that is allowed to flow, the greater the voltage loss across the device and the larger the power that can be transmitted through it. When the gate of the device is turned off, the junction between the n-type and p-type areas become resistive, and no current is allowed to flow. As a result, the voltage across the device is held constant and the power transmitted through the device is reduced. This is how the FGH75T65SQDT_F155 is able to perform its switching applications.

The FGH75T65SQDT_F155 is an incredibly useful IGBT that has a wide range of applications. From welding applications to uninterruptible power supplies to solar energy conversion, this device is able to deliver the power it was designed for with minimal losses, making it a valuable asset to any project. With its special features and simple working principle, the FGH75T65SQDT_F155 is an ideal choice for anyone looking for a reliable and efficient IGBT.

The specific data is subject to PDF, and the above content is for reference

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