FJC1308QTF

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	3A
Voltage - Collector Emitter Breakdown (Max):	30V
Vce Saturation (Max) @ Ib, Ic:	450mV @ 150mA, 1.5A
Current - Collector Cutoff (Max):	500nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 500mA, 2V
Power - Max:	500mW
Frequency - Transition:	--
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	SOT-89-3

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Introduction

The FJC1308QTF is a single bipolar junction transistor (BJT) typically used in low frequency amplifiers, small signal switching, and non-critical audio frequency applications. As a single type device, it can be used in either a single stage or multi-stage amplifier. It is also suitable for applications such as linear and switching power supplies, limiters, and low noise amplifiers. The FJC1308QTF has many features that make it attractive for usage in a wide range of applications. It has an operational bandwidth of approximately 10 MHz, and a maximum collector current of 500mA. There are several varieties of the FJC1308QTF available, such as the dual NPN type, and the single PNP type.

Construction

The FJC1308QTF is a transistor made up of three distinct pieces. The first is the collector and base electrode. The collector electrode is typically an N-type material and acts as the terminal where current can flow in and out of the transistor. The base electrode is an N-type material and is responsible for controlling the current flow between the collector and emitter. The second part of the transistor is the emitter, which is typically a P-type material. The emitter works in conjunction with the base to control the current flow. Lastly, the barrier layer is located between the collector and emitter and helps regulate the amount of current flowing.

Working Principle

The FJC1308QTF transistor is an NPN type device, meaning it has a polarity of negative-positive-negative. An understanding of the operating principles of the BJT is necessary for proper usage and troubleshooting. At low currents, the base-emitter junction is forward biased, meaning the positive voltage at the base electrode drives current through the junction allowing current to flow from the emitter to the collector. This current flow is known as the saturation current and is determined by the current gain of the transistor, commonly known as the β-value. At higher collector currents, the junction is reversed biased. This reverse bias causes the emitter-to-collector current gain to drop significantly. This limited gain can be used in linear functions to help regulate the output power of a circuit. The reverse-biased junction also introduces a small voltage drop at the collector, which is known as the saturation voltage.In series amplification applications, the transistor’s base current will determine the collector current. This is commonly used in small signal amplifiers where the FJC1308QTF transistor can be used as a buffer or voltage amplifier. The FJC1308QTF is also capable of switching operations, given that its switching speed is fast enough for fairly high-speed applications. If a suitably large base current is applied, the transistor can very rapidly switch from a closed to an open state. This can be used in applications such as switch mode power supplies, where the transistor acts as a switch, allowing or blocking the flow of current at a certain voltage level.

Conclusion

The FJC1308QTF is a single, bipolar junction transistor (BJT) designed for operation in low frequency amplifiers, small signal switching, and non-critical audio frequency applications. It has an operational bandwidth of approximately 10 MHz, and a maximum collector current of 500mA. The FJC1308QTF transistor has an NPN type configuration and is capable of both linear and switching operations. Its greatest strength is its ability to handle high collector currents and its fast switching speeds, making it suitable for a wide range of applications.

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