Allicdata Part #: | FJC1386RTF-ND |
Manufacturer Part#: |
FJC1386RTF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 20V 5A SOT-89 |
More Detail: | Bipolar (BJT) Transistor PNP 20V 5A 500mW Surface... |
DataSheet: | FJC1386RTF Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 100mA, 4A |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 180 @ 500mA, 2V |
Power - Max: | 500mW |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89-3 |
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Transistors are widely used electronic components. They are used for amplifying, switching and other purposes. One type of transistor is a Bipolar Junction Transistor (BJT) and more specifically, a single BJT. The FJC1386RTF is an example of a single BJT and its application fields and working principles will be elaborated on in this article.
Application field
The FJC1386RTF is mainly used as a high power switching and amplifying device. It can be used in audio systems, automotive systems, photoelectric modules, microwave communication modules, military systems, and much more. The FJC1386RTF has two packages available: the TO-220-3L package and the TO-263-3L package. The TO-220-3L package has a maximum power dissipation of 1W while the TO-263-3L package has a maximum power dissipation of 0.8W.
Working principle
The FJC1386RTF is a three-terminal single Bjt device consisting of a collector, an emitter and a base. Due to its small size and low power consumption, the FJC1386RTF is suitable for use in small applications. In order for the FJC1386RTF to work, the base needs to be biased. This can be done by passing a certain current through the base. When the base current is sufficiently large enough, holes and electrons that are present in the PN material around the base are attracted towards the emitter and collector, respectively. These holes and electrons form the basis of the BJT operation.
Once the electrons and holes are in the base region they create an electric field that repels each other and in turn restricts the recombination or movement of the holes and electrons. This electric field affects the electrical properties of the region and causes a voltage drop across the base-emitter junction and the base-collector junction.
The voltage drop creates an electric current in the collector-emitter circuit, which is related to the base current. This current is usually larger than the base current due to a phenomenon called “Current Gain”. This current gain is dependent upon the physical distance between the base and collector/emitter, the amount of holes and electrons introduced into the base, and the electric field strength.
The FJC1386RTF is a versatile device that can be used in many applications. The FJC1386RTF has a high power dissipation rating and is suitable for powering high-power applications such as motors or amplifiers. The small size of the FJC1386RTF also makes it suitable for use in small applications. Additionally, the FJC1386RTF has a high current gain, which makes it suitable for use in applications that require a high degree of amplification.
The specific data is subject to PDF, and the above content is for reference
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