Allicdata Part #: | FJC1963STF-ND |
Manufacturer Part#: |
FJC1963STF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 30V 3A SOT-89 |
More Detail: | Bipolar (BJT) Transistor NPN 30V 3A 500mW Surface... |
DataSheet: | FJC1963STF Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 450mV @ 150mA, 1.5A |
Current - Collector Cutoff (Max): | 500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 280 @ 500mA, 2V |
Power - Max: | 500mW |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89-3 |
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FJC1963STF is a type of bipolar junction transistor, commonly referred to as BJT, that is used in a variety of applications. This particular BJT is often selected for applications where high current handling capability, low cost, and low on-state specific on-resistance are important considerations. In general, BJTs are versatile, low-cost, and relatively easy to use. FJC1963STFs are one of the most popular types of BJTs, and have many advantages, including low noise, high gain, and wide bandwidth.
FJC1963STFs are used for various applications such as switches, amplifiers, voltage regulators, and resistors. They are commonly used in the telecommunications industry because of their high current handling capability, low cost, and low on-state specific on-resistance. FJC1963STFs are also commonly used in audio, video, and instrumentation equipment due to their high-performance, low-noise, and high-gain characteristics.
The working principle behind FJC1963STFs is transfer layer current flow. This is a two-terminal device that features a collector region and a base or collector/gate. The collector region is surrounded by a dielectric material and is connected to a power source. The base is connected to the power source, and a current flow is created between the two. The base is then connected to a load, and when a voltage is applied to the gate, it creates a drain current that is proportional to the gate voltage. The collector current is thus determined by the base current and the voltage applied to the gate.
The operation of FJC1963STFs is based on the transfer layer current flow model. When the gate is open, charge carriers move into the collector region, which increases the collector current and decreases the base current. Conversely, when the gate is closed, charge carriers move out of the collector, which reduces the collector current and increases the base current. This principle can be used to construct amplifiers, switches, and other electronic components.
In addition to the transfer layer current flow model, the FJC1963STF also works based on the negative-resistance principle. When the gates are closed, the base-emitter junction delivers a continuous current, resulting in a negative resistance that modulates the current at the collector. This principle is also used in the design of switches, amplifiers, and other electronic components.
Overall, FJC1963STFs offer a variety of benefits for many different applications. Due to their high current handling capability, low cost, and low on-state specific on-resistance, they are an excellent choice for telecommunications and audio-video applications. Additionally, their transfer layer current flow model and negative-resistance principle make them well suited for the design of amplifiers, switches, and other electronic components.
The specific data is subject to PDF, and the above content is for reference
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