FJC1963RTF

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The FJC1963RTF is a single bipolar junction transistor (BJT) with a rated collector current IC of 500 mA, a collector output voltage VCEO of −60 V, and a collector-emitter breakdown voltage VCES of −75 V (Figure 1). This device is available in a 3-pin surface mount package with a space saving outline, making it an ideal choice for high frequency and power applications.

The FJC1963RTF is a general-purpose NPN transistor used mainly for amplification and switching of signals and power. This device can be used for switching on and off at high frequencies, such as in radio frequency (RF) applications, or for high voltage and current applications, such as in power conversion units. It can also be used in switching applications, such as in transistors employed in circuits controlling AC and DC power, such as power transducers, or in interfacing or driving of digital logic.

At high frequencies, the FJC1963RTF can provide amplification, wave shaping, and signal switching capabilities with excellent speed and high gain. The high transition frequency of this device makes it suitable for high speed, low noise operation. Its compact size makes the device suitable for applications with space constraints.

The working principle of the FJC1963RTF transistor is based on the movement of electrons between a base layer and two collector layers. Electrons in the base of the device are injected into the collector layers, which are in turn connected to the source, in which the output current is produced. The base-emitter bias voltage controls the injection of electrons from the base, thus controlling the output current.

The device has a voltage-controlled operation, which means a relatively small change in the base-emitter bias voltage can cause significant changes in the collector current. The FJC1963RTF transistor is capable of operating at very high frequency and can provide excellent linearity for signal applications, making it an ideal choice for use in RF amplifiers.

The power handling capabilities of the FJC1963RTF make it suitable for applications such as power conditioning, power conversion units, and even laser drivers. It is also ideal for use in industrial control applications, where the device can be used to provide reliable long-term operation and efficient high-frequency operation.

In summary, the FJC1963RTF is a general-purpose single bipolar junction transistor with a rated collector current of 500 mA and collector output voltage of -60 V. It is suitable for use in radio frequency and power conversion applications, as well as for signal switching, power conditioning, and laser drivers. Its high transition frequency, high gain, and excellent linearity make it a preferred choice for signal applications.

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