FJC1386QTF

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	5A
Voltage - Collector Emitter Breakdown (Max):	20V
Vce Saturation (Max) @ Ib, Ic:	1V @ 100mA, 4A
Current - Collector Cutoff (Max):	500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 500mA, 2V
Power - Max:	500mW
Frequency - Transition:	--
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	SOT-89-3

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FJC1386QTF Application Field and Working PrincipleThe FJC1386QTF is a single-gated PN Junction Transistor (BJT) device from Fairchild Semiconductor. It is designed as an advanced low-cost solution for consumer and professional applications until small, rugged, and reliable power transistors. The FJC1386QTF device is suitable for a variety of consumer and professional applications, including general-purpose switching, power supplies, and power amplifiers.The FJC1386QTF is manufactured with a low-cost process, which also increases its reliability. It has a high breakdown voltage rating of 70V and a high current rating of 15A. It is available in TO-220, TO-220F and TO-247 packages, making it suitable for a variety of applications.The FJC1386QTF has a gain bandwidth of 9.7 MHz, which offers the excellent performance when used in various applications. Its low-leakage current under reverse bias conditions ensures that it is well-suited for power supplies and power amplifiers, and makes it a robust device for consumer and professional applications.The FJC1386QTF has a maximum junction voltage of 175V and a current handling capacity of 15A. It can operate at temperatures up to 150°C, making it well suited for harsh operating environments. It is also designed to work with a wide range of input voltages, from 5V to 50V.In terms of its structure, the FJC1386QTF contains a pair of semiconductor P-type and N-type connected together in a sandwich-like configuration. A wide-bandgap substrate is used as a dielectric layer between the two. This substrate helps reduce device leakage current, ensuring the device is stable at high temperatures and low-coefficients of thermal expansion (CTE).The FJC1386QTF works on the principle of majority carrier conduction. It uses holes and electrons as charge carriers and its switching principle is based on the reverse conduction of these carriers. When forward bias is applied to the junction between the P-type and N-type layers, holes flow from the P-type to the N-type layer, and electrons move in the opposite direction. This creates a controlled flow of charge carriers, which can be used to control the voltage on the output of the device.In conclusion, the FJC1386QTF is an advanced and reliable BJT device, suitable for a variety of consumer and professional applications. Its low-cost process and robust design make it an ideal device for power supplies, power amplifiers and general-purpose switching. The wide-bandgap substrate ensures maximum device stability and longevity, while the high breakdown voltage and current ratings makes it a reliable device for a variety of applications.

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