FJC1308RTF

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	3A
Voltage - Collector Emitter Breakdown (Max):	30V
Vce Saturation (Max) @ Ib, Ic:	450mV @ 150mA, 1.5A
Current - Collector Cutoff (Max):	500nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	180 @ 500mA, 2V
Power - Max:	500mW
Frequency - Transition:	--
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	SOT-89-3

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Transistors - Bipolar (BJT) - Single

FJC1308RTF is a type of bipolar junction transistor (BJT) used as an electronic switch. B JTs are constructed of three layers, which are made up of a semiconductor material, like silicon or germanium, with one layer of electrically positive material, known as the base. The second layer is an electrically neutral material, known as the collector, and the third layer is an electrically negative material, known as the emitter.FJC1308RTFs are designed to operate between 30 V and 200 V, with a maximum collector current rating of 220 mA and collector-emitter voltage of 30 V. These transistors can dissipate power up to 500 mW, with a maximum voltage drop of 1.3 V at the base-emitter junction. These transistors are typically employed in high-frequency switching circuits and generally operate in the range of 10 khz to 1 Mhz.When a FJC1308RTF is switched on, the base-emitter junction becomes reversed biased and allows electrons to flow from the emitter to the collector. The voltage and current at the collector is proportional to the current supplied to the base, allowing current amplification. When the voltage across the collector-emitter junction increases beyond its breakdown voltage (VBE), the transistor will switch off and the current flow will cease.The working principle of the FJC1308RTF is based on the fact that when sufficient voltage is applied to the base of the transistor, the transistor will activate and allow current to flow between the collector and emitter. The base-emitter voltage, also referred to as the "forward bias", is important because this voltage determines the current flow between the collector and emitter.The FJC1308RTF\'s application fields span a wide range, including logic circuits, embedded device controls, audio amplifiers, motor drivers, and power management solutions. The versatility of this device makes it suitable for a range of applications, such as automotive, industrial, and consumer electronics. Some examples include drivers for DC motors, such as those used in robot arms, applications, as well as in charger/discharger circuits.Due to its high current, low power dissipated and small size, the FJC1308RTF is an attractive transistor solution for many applications. This makes it ideal for use in portable devices, as it allows for smaller form factors, longer battery life, and improved heat dissipation. The low power dissipated by the FJC1308RTF also limits power consumption, making it ideal for use in wireless networks and RF applications.The FJC1308RTF is a popular choice for many applications due to its high power and current ratings, small form factor and low power dissipation. Its versatility makes it suitable for a wide range of applications, from automotive and industrial uses to consumer electronics. It is also attractive due to its low cost and wide availability.

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