FJV4101RMTF Allicdata Electronics

FJV4101RMTF Discrete Semiconductor Products

Allicdata Part #:

FJV4101RMTFTR-ND

Manufacturer Part#:

FJV4101RMTF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS PNP 200MW SOT23-3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: FJV4101RMTF datasheetFJV4101RMTF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V
Base Part Number: FJV4101
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 200MHz
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Bipolar junction transistors (BJTs) are an essential tool for an electronics engineer. They can be used for a wide variety of functions, from amplifying signals to switching large currents. The FJV4101RMTF is a pre-biased single BJT that allows engineers to use their own bias voltage and current sources. This provides them with more flexibility and control over the transistor\'s performance, making it an ideal choice for a variety of digital and analog circuits.

The FJV4101RMTF is a NPN transistor, meaning it comprises two P-type and one N-type semiconductor materials. The emitter of the FJV4101RMTF is connected to the ground, while the collector and base are connected to their respective biasing sources. The precision of the biasing sources is important to ensure that the transistor will operate correctly.

The FJV4101RMTF has an emitter-base voltage of 5V and a collector-base voltage of 20V. The transistor\'s current gain is superior to most other single transistors, providing excellent dynamic performance. This allows the transistor to switch very quickly without compromising on power efficiency or heat dissipation.

The FJV4101RMTF is capable of operating at frequencies of up to 25MHz with very low noise levels. This makes it an ideal choice for applications requiring high speed and reliable operation. Furthermore, the FJV4101RMTF has a wide operating temperature range of -40°C to +125°C, making it suitable for use in a variety of applications.

The working principle behind the FJV4101RMTF is that of a current amplifier. When current is supplied to the base of the transistor, it amplifies the current flowing through the collector-emitter circuit. This amplified current is applied to an external load, such as an LED or a motor. The current gain of the transistor, or hFE, determines the degree to which the current is amplified.

In addition to its amplifier capabilities, the FJV4101RMTF can be used as a switch in both digital and analog circuits. When its base is fed with a signal, it can turn the device on and off quickly, switching large currents with low on-resistance and virtually no delay. This makes it suitable for driving motors, lamps and other loads.

The FJV4101RMTF is a versatile pre-biased single BJT that can be used for a variety of analog and digital applications. Its excellent current gain and wide operating temperature range make it an ideal choice for circuit design. Furthermore, its ability to switch between low-noise amplification and fast switching makes it an ideal component for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "FJV4" Included word is 15
Part Number Manufacturer Price Quantity Description
FJV4113RMTF ON Semicondu... -- 1000 TRANS PREBIAS PNP 200MW S...
FJV4104RMTF ON Semicondu... -- 1000 TRANS PREBIAS PNP 200MW S...
FJV4114RMTF ON Semicondu... -- 1000 TRANS PREBIAS PNP 200MW S...
FJV4112RMTF ON Semicondu... -- 1000 TRANS PREBIAS PNP 200MW S...
FJV4106RMTF ON Semicondu... 0.0 $ 1000 TRANS PREBIAS PNP 200MW S...
FJV4107RMTF ON Semicondu... 0.0 $ 1000 TRANS PREBIAS PNP 200MW S...
FJV4103RMTF ON Semicondu... -- 1000 TRANS PREBIAS PNP 200MW S...
FJV4111RMTF ON Semicondu... 0.0 $ 1000 TRANS PREBIAS PNP 200MW S...
FJV4105RMTF ON Semicondu... 0.0 $ 1000 TRANS PREBIAS PNP 200MW S...
FJV4109RMTF ON Semicondu... 0.0 $ 1000 TRANS PREBIAS PNP 200MW S...
FJV4108RMTF ON Semicondu... 0.0 $ 1000 TRANS PREBIAS PNP 200MW S...
FJV4110RMTF ON Semicondu... 0.0 $ 1000 TRANS PREBIAS PNP 200MW S...
FJV4102RMTF ON Semicondu... -- 1000 TRANS PREBIAS PNP 200MW S...
FJV4101RMTF ON Semicondu... 0.0 $ 1000 TRANS PREBIAS PNP 200MW S...
FJV42MTF ON Semicondu... -- 1000 TRANS NPN 350V 0.5A SOT-2...
Latest Products
PDTD113EK,115

TRANS PREBIAS NPN 250MW SMT3Pre-Biased B...

PDTD113EK,115 Allicdata Electronics
PDTC144WS,126

TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...

PDTC144WS,126 Allicdata Electronics
PDTD123YS,126

TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...

PDTD123YS,126 Allicdata Electronics
PDTD123TS,126

TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...

PDTD123TS,126 Allicdata Electronics
PDTD123TK,115

TRANS PREBIAS NPN 250MW SMT3Pre-Biased B...

PDTD123TK,115 Allicdata Electronics
PDTD123ES,126

TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...

PDTD123ES,126 Allicdata Electronics