FJV4101RMTF Discrete Semiconductor Products |
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Allicdata Part #: | FJV4101RMTFTR-ND |
Manufacturer Part#: |
FJV4101RMTF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 200MW SOT23-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | FJV4101RMTF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 10mA, 5V |
Base Part Number: | FJV4101 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 200MHz |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 4.7 kOhms |
Resistor - Base (R1): | 4.7 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Bipolar junction transistors (BJTs) are an essential tool for an electronics engineer. They can be used for a wide variety of functions, from amplifying signals to switching large currents. The FJV4101RMTF is a pre-biased single BJT that allows engineers to use their own bias voltage and current sources. This provides them with more flexibility and control over the transistor\'s performance, making it an ideal choice for a variety of digital and analog circuits.
The FJV4101RMTF is a NPN transistor, meaning it comprises two P-type and one N-type semiconductor materials. The emitter of the FJV4101RMTF is connected to the ground, while the collector and base are connected to their respective biasing sources. The precision of the biasing sources is important to ensure that the transistor will operate correctly.
The FJV4101RMTF has an emitter-base voltage of 5V and a collector-base voltage of 20V. The transistor\'s current gain is superior to most other single transistors, providing excellent dynamic performance. This allows the transistor to switch very quickly without compromising on power efficiency or heat dissipation.
The FJV4101RMTF is capable of operating at frequencies of up to 25MHz with very low noise levels. This makes it an ideal choice for applications requiring high speed and reliable operation. Furthermore, the FJV4101RMTF has a wide operating temperature range of -40°C to +125°C, making it suitable for use in a variety of applications.
The working principle behind the FJV4101RMTF is that of a current amplifier. When current is supplied to the base of the transistor, it amplifies the current flowing through the collector-emitter circuit. This amplified current is applied to an external load, such as an LED or a motor. The current gain of the transistor, or hFE, determines the degree to which the current is amplified.
In addition to its amplifier capabilities, the FJV4101RMTF can be used as a switch in both digital and analog circuits. When its base is fed with a signal, it can turn the device on and off quickly, switching large currents with low on-resistance and virtually no delay. This makes it suitable for driving motors, lamps and other loads.
The FJV4101RMTF is a versatile pre-biased single BJT that can be used for a variety of analog and digital applications. Its excellent current gain and wide operating temperature range make it an ideal choice for circuit design. Furthermore, its ability to switch between low-noise amplification and fast switching makes it an ideal component for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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