FJV4104RMTF Allicdata Electronics

FJV4104RMTF Discrete Semiconductor Products

Allicdata Part #:

FJV4104RMTFTR-ND

Manufacturer Part#:

FJV4104RMTF

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS PNP 200MW SOT23-3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: FJV4104RMTF datasheetFJV4104RMTF Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 0.03000
10 +: $ 0.02910
100 +: $ 0.02850
1000 +: $ 0.02790
10000 +: $ 0.02700
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Resistor - Emitter Base (R2): 47 kOhms
Base Part Number: FJV4104
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 200MHz
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Series: --
Resistor - Base (R1): 47 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Last Time Buy
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The FJV4104RMTF is a single, pre-biased transistor device from the family of Bipolar Junction Transistors (BJTs). This device is a four-terminal, surface-mount transistor, with a pre-biasing circuit integrated into the device.

The device belongs to an extended family of pre-biased transistors designed to address specific customer-requested pre-biasing functions. The pre-biased features enable lower power consumption, improved reliability and performance, as well as reduced manufacturing cost.

This transistor is designed to handle voltage up to 500 volts. It features the highest current gain, high current handling capability, low on-state resistance and low reverse leakage. The wide utility range ensures excellent power control in a variety of applications.

The room-temperature operating frequency range of the device is from 20 Hz to 3 MHz. The device also has a wide amplitude range of about 1.4 V to 5.4 V, enabling it to handle large signal swings and resist heat damage.

Its integrated pre-biasing circuit keeps the input impedance of the device at a low value before the signal is applied, allowing the current and voltage to remain steady and uniform. A pre-biased transistor is expected to endure high-voltage pulse waveforms and therefore its lifetime is expected to be high.

The FJV4104RMTF has an excellent thermal dissipation capability, which allows it to run at a higher temperature compared to other transistors with similar electrical and physical specifications. This makes the transistor suitable for use in harsh and high temperature environments.

The high performance, low on-state resistance, high current-handling capabilities and excellent thermal dissipation capability make the FJV4104RMTF particularly well-suited to applications such as in portable and mobile devices, battery-powered devices, and automotive applications.

Additionally, its low reverse leakage and high current gain characteristics make it well-suited for audio applications, including power amplifiers, headphone pre-amplifiers, and power supply applications.

In conclusion, the FJV4104RMTF single, pre-biased transistor is well-suited for use in a wide range of applications, from automotive, to audio, to portable and mobile. Its pre-biasing circuit keeps the device’s input impedance low, leading to improved reliability and performance, as well as reduced manufacturing cost. With its excellent thermal dissipation capability, it is well-suited for use in harsh, hot environments. Its wide range of operational capabilities make it well-suited for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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