FJV4106RMTF

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	10 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):	100nA (ICBO)
Frequency - Transition:	200MHz
Power - Max:	200mW
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)

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The FJV4106RMTF is a single, pre-biased bipolar transistor (BJT) that can be used across a variety of different applications and industries. The FJV4106RMTF is a high-speed switching device, capable of providing very high surge currents and extremely fast switching times. This makes it well-suited for a variety of applications, including high-frequency switching, telecoms and mobile systems, and automotive.The transistor is primarily composed of three sections; the emitter, collector, and base. The emitter collects electrons from the external circuit, and releases them into the collector. The base, which is connected to the external circuitry, acts as a gate, allowing the electrons to flow between the emitter and collector. This enables the transistor to switch from an on-state to an off-state and vice-versa.The FJV4106RMTF is an NPN type transistor. This means that the collector is connected to the positive rail (commonly referred to as VCC) and the emitter is connected to the ground (referred to as GND). When the base is connected to a voltage higher than the voltage at the emitter, then current can flow from the collector to the emitter. This is known as the forward bias condition. In the reverse bias condition, no current flows between the emitter and collector.The FJV4106RMTF is used in many different applications, such as in pulsed power applications where high current is used in a short time or in switching applications where fast response times are required. It is also used in audio amplifiers, where its high current capability and low noise can be advantageous. Furthermore, its ability to handle large voltage and current levels combined with its high switching speed make it an ideal device for high-frequency circuits such as RF and microwave applications.The FJV4106RMTF also has some important characteristics that make it particularly attractive for many applications. Firstly, it has a relatively low on-resistance when compared to similar switching devices. This means that it can provide linear and stabilized current flow through the transistor, reducing the amount of power lost due to heat and reducing the amount of current variation. Similarly, the device has a low saturation voltage, meaning it can be used in additional high-current applications such as battery powered devices.The FJV4106RMTF also has a high frequency operation. This makes it well-suited to a variety of high frequency applications such as microwave and digital circuits. In addition to its high frequency operation, the device also has a high breakdown voltage, meaning it can be used in applications with higher voltages.Finally, the FJV4106RMTF also has a high storage temperature range. This means that it can be used in temperature-sensitive applications such as automotive electronics. The device is also designed to dissipate heat quickly and efficiently, allowing it to switch at high frequencies and higher voltages without overheating. In conclusion, the FJV4106RMTF is a versatile and reliable single, pre-biased bipolar transistor that can be used in a variety of applications. Its features, including its low on-resistance, low saturation voltage, high switching speed, and high frequency response, make it well-suited to a variety of applications in the telecommunications, automotive, and consumer electronics industries.

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