FJV4114RMTF Discrete Semiconductor Products

Resistor - Emitter Base (R2):	47 kOhms
Base Part Number:	FJV4114
Supplier Device Package:	SOT-23-3 (TO-236)
Package / Case:	TO-236-3, SC-59, SOT-23-3
Mounting Type:	Surface Mount
Power - Max:	200mW
Frequency - Transition:	200MHz
Current - Collector Cutoff (Max):	100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	68 @ 5mA, 5V
Series:	--
Resistor - Base (R1):	4.7 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	PNP - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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The FJV4114RMTF is an enhancement-mode, N-channel Silicon-MOSFET pre-biased transistor designed for triggering applications. In particular, it is well-suited for automotive, telecommunications, and industrial control circuitry applications.The FJV4114RMTF comes with a maximum drain-source voltage rating of 30V. This rating ensures that the internal MOSFET transistors dissipate minimal amounts of power. It also has a drain current rating of 4A, a gate leak current rating of 5µA, and a maximum drain-source on-state resistance of 0.01Ohm. Typically, the FJV4114RMTF is found in surface-mount packages that maintain the device’s electrical characteristics at high temperatures. Moreover, the FJV4114RMTF comes with a maximum operating voltage of 24V. This rating allows the FJV4114RMTF to be driven in applications involving medium and high-voltage operation. Moreover, the FJV4114RMTF comes with an integrated circuit design that ensures a low voltage drop and a low power dissipation. The FJV4114RMTF is a single active device, meaning it does not require any external discrete components for normal operation. This advantage is due to the FJV4114RMTF’s internal circuitry which consists of two transistors connected in a pre-biased network. The transistors are then interconnected in a single conductive phase in order to control the flow of current through the device. The FJV4114RMTF employs a floating gate capacitance, which supplies a voltage to the device when it is in a pre-biased condition. This voltage is sufficient to turn on the device when the gates are connected to a voltage source. Generally, the FJV4114RMTF requires a gate-to-source voltage between -3V and 24V to remain in the pre-biased condition. When the FJV4114RMTF is in the pre-biased condition, then a current begins to flow between the gate and the source of the device. This current is known as the pre-bias drift current. The drift current is then regulated by the floating gate capacitance, which ensures that the pre-bias voltage does not exceed the voltage rating of the device. Furthermore, the FJV4114RMTF is capable of operating in both low and high-voltage applications. In low-voltage applications, the device is protected against over-voltage due to the built-in reverse-blocking parasitic diodes. In high-voltage applications, the device is protected against electrostatic discharge due to the built-in reverse-blocking parasitic diodes. In summary, the FJV4114RMTF is an N-Channel Silicon-MOSFET pre-biased transistor designed for triggering applications. It has a maximum drain-source voltage rating of 30V and drain current rating of 4A. Additionally, the FJV4114RMTF does not require any external discrete components for normal operation and it is capable of operating in both low and high-voltage applications.

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