Allicdata Part #: | FJV4109RMTF-ND |
Manufacturer Part#: |
FJV4109RMTF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 200MW SOT23-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | FJV4109RMTF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Resistor - Base (R1): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Description
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The FJV4109RMTF, which is classified as Transistors – Bipolar (BJT) – Single, Pre-Biased, has a number of applications. It is typically used in power management circuits and regulator circuits, due to its high power handling capabilities.The FJV4109RMTF is a NPN silicon pre-biased transistor designed for high voltage applications. It operates with a collector-emitter voltage of up to 1,200 volts and with a collector current of up to 9 amperes. The collector-emitter saturation voltage is specified as low as 0.2 V with a collector current of 1.5 Amps. This makes the FJV4109RMTF ideal for use in high voltage, high current applications.The FJV4109RMTF also has the ability to switch on and off current and voltage signals quickly, so it is often used in circuits for frequency regulation, pulse width modulation and switching power converters. Its fast switching capability also makes it useful for circuits that require short switching times.The working principle of the FJV4109RMTF is based on the bipolar junction transistor. The FJV4109RMTF is made of a substrate material with three layers of doping. The layers consist of an N-type contact, a P-type contact, and an N-type collector. Each of these layers is surrounded by a dielectric material, which isolates each layer from one another.When there is a voltage present between the collector and the emitter, the electrons in the collector flow to the emitter, while the holes in the emitter flow to the collector. This results in a current flow between the collector and emitter. This current flow can be controlled by varying the voltage between the emitter and the collector.The FJV4109RMTF is designed to handle large currents and voltages, so it is ideal for applications where power management and regulation are important. It can be used to switch voltages and current quickly, making it suitable for circuits that require frequent switching.The specific data is subject to PDF, and the above content is for reference
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