FJV4113RMTF Allicdata Electronics

FJV4113RMTF Discrete Semiconductor Products

Allicdata Part #:

FJV4113RMTFTR-ND

Manufacturer Part#:

FJV4113RMTF

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS PNP 200MW SOT23-3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: FJV4113RMTF datasheetFJV4113RMTF Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 0.03000
10 +: $ 0.02910
100 +: $ 0.02850
1000 +: $ 0.02790
10000 +: $ 0.02700
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Resistor - Emitter Base (R2): 47 kOhms
Base Part Number: FJV4113
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 200MHz
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Series: --
Resistor - Base (R1): 2.2 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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FJV4113RMTF, a kind of transistor, belongs to the category of transistors - bipolar (BJT) - single, pre-biased. It’s intended to be used to make switching and amplification circuits in various types of applications such as communication equipment, computer, consumer electronics and industrial automation. In this article, the application field and working principle of FJV4113RMTF will be discussed in details.

When compared to other bipolar transistors, FJV4113RMTF has a much higher gain. It features a higher emitter-base voltage and collector-base saturation voltage, and offers higher current gain than other bipolar transistors. It is also quite reliable, and it can be used in both low-voltage and high-voltage circuits. It is suitable for use in a variety of electronic devices such as television sets, video recorders, and audio equipment.

FJV4113RMTF’s application field mainly includes motor control, power electronics, and switching circuits. Motor control involves controlling the speed or torque of a motor. The FJV4113RMTF can be used for this purpose because it can efficiently drive the motor with its high current gain. It is also used in power electronics since it has a high emitter-base voltage and collector-base saturation voltage. These features make the device suitable for voltage control applications. Apart from that, it can also be used in switching circuits since it is relatively reliable and can handle low-voltage and high-voltage circuits.

FJV4113RMTF is a pre-biased device, meaning that it is in an "on-state" when powered on. To turn it off, an external voltage must be applied to the base of the device. This device is a NPN type, which means that the current flows from the collector region to the emitter region. The base acts as a switch, and the collector-emitter current is controlled by the amount of base current. The gain of the device is determined by the ratio of the collector current to the base current. The higher the ratio, the higher the gain.

FJV4113RMTF is also an excellent choice for amplifying audio signals. This is because it has high current gain, high voltage gain, and low noise. This device can also be used in many other applications, such as digital logic circuits and DC amplifier circuits. It is important to note that the device must be properly biased to ensure it operates correctly. If not, then it can cause instability in the circuit and damage to the system.

In conclusion, FJV4113RMTF belongs to the category of transistors - bipolar (BJT) - single, pre-biased. It is mainly used in motor control, power electronics, and switching circuits as well as audio amplification. It features a higher emitter-base voltage, a higher collector-base saturation voltage, and a high current gain. It is important that the device must be properly biased in order to ensure it operates correctly.

The specific data is subject to PDF, and the above content is for reference

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