FJV4103RMTF Allicdata Electronics
Allicdata Part #:

FJV4103RMTF-ND

Manufacturer Part#:

FJV4103RMTF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS PNP 200MW SOT23-3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: FJV4103RMTF datasheetFJV4103RMTF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Description

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FJV4103RMTF is a special type of single, pre-biased transistor, which belongs to the family of bipolar junction transistors (BJTs). This device was designed for theAutomotive storage, Control, Sensing and Detection industry and for the High-voltage, Low Power applications.

The FJV4103RMTF is primarily used in electronic control circuits, such as switching and lighting control, monitoring circuits, and low power signal amplification applications. It features a built in bias resistor which simplifies the circuit design, reduces power consumption and makes it highly reliable.

The FJV4103RMTF has two parts: the input and the output stage. The input stage is composed of two N-channel junction field-effect transistors (JFETs). These N-FETs are biased by a resistive divider and provide current gain. The output stage consists of two P-channel junction field-effect transistors (JFETs). These P-FETs are biased by an external resistor, which provides current gain. In addition, the input stage and output stage are connected to the substrate through an additional circuit, which provides a negative feedback to compensate for any non-ideal characteristics. The FJV4103RMTF also includes a thermal shutdown circuit to protect it from overheating.

In operation, the FJV4103RMTF takes a small input signal, such as a logic-level input, and amplifies it to a larger voltage or current. It operates based on the principle of current gain, where the output current is a multiple of the input current. Since the input and output stages are connected to the substrate, the FJV4103RMTF is able to provide feedback, which helps reduce any non-ideal characteristics, such as distortion.

The FJV4103RMTF is an ideal device for applications requiring low power consumption, such as automotive control and sensing circuits. It is also a great choice for high-voltage, low-power applications, as it can provide efficient and reliable operation in a compact package. As such, the FJV4103RMTF is a popular choice for designers who require fast switching and low power consumption.

The specific data is subject to PDF, and the above content is for reference

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