Allicdata Part #: | FJV4103RMTF-ND |
Manufacturer Part#: |
FJV4103RMTF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 200MW SOT23-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | FJV4103RMTF Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 22 kOhms |
Resistor - Emitter Base (R2): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 56 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
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FJV4103RMTF is a special type of single, pre-biased transistor, which belongs to the family of bipolar junction transistors (BJTs). This device was designed for theAutomotive storage, Control, Sensing and Detection industry and for the High-voltage, Low Power applications.
The FJV4103RMTF is primarily used in electronic control circuits, such as switching and lighting control, monitoring circuits, and low power signal amplification applications. It features a built in bias resistor which simplifies the circuit design, reduces power consumption and makes it highly reliable.
The FJV4103RMTF has two parts: the input and the output stage. The input stage is composed of two N-channel junction field-effect transistors (JFETs). These N-FETs are biased by a resistive divider and provide current gain. The output stage consists of two P-channel junction field-effect transistors (JFETs). These P-FETs are biased by an external resistor, which provides current gain. In addition, the input stage and output stage are connected to the substrate through an additional circuit, which provides a negative feedback to compensate for any non-ideal characteristics. The FJV4103RMTF also includes a thermal shutdown circuit to protect it from overheating.
In operation, the FJV4103RMTF takes a small input signal, such as a logic-level input, and amplifies it to a larger voltage or current. It operates based on the principle of current gain, where the output current is a multiple of the input current. Since the input and output stages are connected to the substrate, the FJV4103RMTF is able to provide feedback, which helps reduce any non-ideal characteristics, such as distortion.
The FJV4103RMTF is an ideal device for applications requiring low power consumption, such as automotive control and sensing circuits. It is also a great choice for high-voltage, low-power applications, as it can provide efficient and reliable operation in a compact package. As such, the FJV4103RMTF is a popular choice for designers who require fast switching and low power consumption.
The specific data is subject to PDF, and the above content is for reference
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