Allicdata Part #: | FMMTH10TC-ND |
Manufacturer Part#: |
FMMTH10TC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANSISTOR RF NPN SOT23-3 |
More Detail: | RF Transistor NPN 25V 25mA 650MHz 330mW Surface Mo... |
DataSheet: | FMMTH10TC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Frequency - Transition: | 650MHz |
Noise Figure (dB Typ @ f): | 3dB ~ 5dB @ 500MHz |
Gain: | -- |
Power - Max: | 330mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 4mA, 10V |
Current - Collector (Ic) (Max): | 25mA |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | FMMTH10 |
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FMMTH10TC is a high-frequency bipolar junction transistor (BJT) commonly used in radio-frequency (RF) applications. It has a dielectric withstanding voltage of >25V, providing a medium breakdown voltage between a standard 2N3904 small-signal BJT and a 2N5458 high-power BJT. The circuit applications of this transistor are numerous, ranging from low voltage, low power amplifiers to high power switching applications.
The FMMTH10TC is designed for use in the frequency range between 100-1000 MHz, and has a minimum gain (hfe) of up to 350 at 100MHz. It has a maximum power-dissipation capability of 4 watts, making it ideal for applications which require high gain and high frequency. The maximum collector current of 10 amps and the maximum collector-emitter saturation voltage of 0.8V also make it suitable for use in high power switching circuits.
The key parameter that defines the performance of the FMMTH10TC is its current gain. This is specified according to the mean of three values, DC, modulated, and FT (power gain). The average value of these three parameters is important when designing the device for the desired application. For example, the gain of the device can be increased by optimizing the output devices in the design. The current gain performance is also influenced by the base bias circuit.
The principle of operation of the FMMTH10TC is similar to other BJTs. When a voltage is applied to the base, a current is produced which is proportional to the base-emitter voltage. This current is then amplified by the collector and is used to control the current flow through the load. In addition to this, the reverse base-emitter voltage is used to control the gain of the device. The gain of the device is determined by its forward current gain and reverse current gain.
The FMMTH10TC is also commonly used in RF applications due to its high power-handling capability, high frequency rating, and low power loss. This type of transistor is highly suitable for applications that require high-power handling and large bandwidth. It can also be used in switching applications such as remote-controlled circuit breakers and relays. Finally, the FMMTH10TC can be used in amplifier circuits where frequency and power requirements are high.
The FMMTH10TC is a highly versatile device that can be used in a variety of applications. Its key feature is its high power handling, high frequency rating, and low power loss. It is an ideal solution for applications that require high power and large bandwidths. The device can also be used for switching applications and high-frequency amplifier designs. In conclusion, the FMMTH10TC is a suitable choice for applications that require a high power and large bandwidth.
The specific data is subject to PDF, and the above content is for reference
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