Allicdata Part #: | FMMT415TC-ND |
Manufacturer Part#: |
FMMT415TC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 100V 0.5A SOT23-3 |
More Detail: | Bipolar (BJT) Transistor NPN - Avalanche Mode 100V... |
DataSheet: | FMMT415TC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Avalanche Mode |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 25 @ 10mA, 10V |
Power - Max: | 330mW |
Frequency - Transition: | 40MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | FMMT415 |
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FMMT415TC is a high voltage NPN high power transistors specifically designed for use in power switching applications. It is made using the silicon epitaxial process and is designed to provide a high current capacity of up to 150mA while still retaining minimum device power dissipation. This is made possible through the wide range of bias and pulse current ratings that the FMMT415TC offers. The FMMT415TC is also equipped with built-in protection from both over-voltage and over-temperature conditions, allowing the device to safely operate in any environment.
The FMMT415TC is widely used for cellular radio and for railway control systems. The device is also useful in battery-powered portable electronic equipment such as mobile phones and digital cameras since it has low power consumption and high efficiency. The FMMT415TC is also suitable for higher voltage applications, such as DC/DC converters and motor drive systems, due to its high-voltage standing capability.
The FMMT415TC is a bipolar junction transistor (BJT) specifically designed for high-speed switching applications because of its low turn-on time of up to 0.6µs, low VCE(SAT) voltage of 1.6V, and high-speed gain of 1.6A/V. It also has an avalanche energy >200mJ and maximum collector current rating of 150mA. The maximum power dissipation for the device is 0.2W with an operating temperature range of -65°C to +150°C.
The working principle of the FMMT415TC is based on the bipolar transistor mechanism, which basically consists of three semiconductor layers called the emitter, base and collector (EBC). The highly doped emitter and collector layers are responsible for allowing current to flow between them while the base layer is a lightly doped semiconductor layer which is responsible for controlling the current flow. The current flow will depend upon the potential that the base layer is exposed to and the base-emitter voltage difference. The FMMT415TC also uses a suppression diode to help reduce the voltage seen by the base-emitter junction.
In summary, the FMMT415TC is a high voltage NPN high power transistor specifically designed for use in power switching applications. It is a popular choice for applications such as cellular radio and railway control systems due to its features such as its low power consumption, high efficiency, built-in protection against over-voltage and over-temperature conditions, high-speed switching capability, and avalanche energy rating. The FMMT415TC is a single bipolar junction transistor (BJT) that operates on the principle of controlling current flow between the base and the collector layers.
The specific data is subject to PDF, and the above content is for reference
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