Allicdata Part #: | FMMT493ATR-ND |
Manufacturer Part#: |
FMMT493ATA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 60V 1A SOT23-3 |
More Detail: | Bipolar (BJT) Transistor NPN 60V 1A 150MHz 500mW S... |
DataSheet: | FMMT493ATA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 100mA, 1A |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 300 @ 250mA, 10V |
Power - Max: | 500mW |
Frequency - Transition: | 150MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | FMMT493A |
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FMMT493ATA is a NPN bipolar junction transistor (BJT). It is manufactured with leadless face and power flat packages, which make it best suited for autopackage applications. The transistor features an industry-standard SECC2 (smallest, simplest, standard, and cheapest) PNP layout, which consists of three terminals: the base, the collector, and the emitter. Each terminal is designed to maximize signal integrity and reduce power dissipation. FMMT493ATA has a maximum collector current of 400mA and a maximum collector-emitter voltage of 100V.
FMMT493ATA is ideally suited for use in high-frequency amplifiers, switching circuits, logic circuits and HF interfaces. It can be used in a variety of commercial and industrial applications, such as power supplies, motor control, LED drivers, switch mode audio amplifiers and power converters. In addition, its ability to operate at frequencies up to 1GHz makes it well suited for use in microwave and digital communication applications.
The working principle of FMMT493ATA is based on the bipolar junction transistor (BJT). The basic model of a BJT consists of three doped regions, which are intrinsic regions, the emitter, and the collector. All three of these regions are connected to three terminals called the emitter, collector, and base. When a voltage is applied to the base, it generates a current in the emitter-collector circuit. This current is controlled by the magnitude of the applied base voltage. The resulting collector current is proportional to the base current, which is determined by the base-emitter voltage.
The FMMT493ATA transistor is designed to provide high performance, reliability and low power consumption. It has a special NPN configuration which offers improved switching performance over traditional transistors. The designed layout provides minimal heat transfer, ensuring that the device can operate efficiently at low temperature intervals. The low noise level of the FMMT493ATA is a great benefit for use in audio applications. It also provides excellent dielectric insulation and eliminates the possibility of ESD damage.
In conclusion, the FMMT493ATA is an excellent choice for many applications due to its reliability, small size and high performance. Its versatile design allows it to be used in a range of applications, from high frequency amplifiers to LED drivers and beyond. Its NPN configuration offers improved switching performance, and its low power consumption ensures that it can be used in energy-sensitive applications. The low noise level makes it great for use in audio applications, and the dielectric insulation eliminates the possibility of ESD damage.
The specific data is subject to PDF, and the above content is for reference
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