FMMT619TC

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	2A
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	220mV @ 50mA, 2A
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 1A, 2V
Power - Max:	625mW
Frequency - Transition:	165MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Base Part Number:	FMMT619

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FMMT619TC is a high-performance NPN silicon epitaxial-base transistor designed for audio amplifier and switching applications. It is one of the best available power transistors currently available in the market and can handle high-mains voltages without sacrificing performance. It has a wide range of applications and can be used in power, high-speed switching, audio amplifiers, and even some consumer electronics applications.

The FMMT619TC is a single-stage, NPN silicon epitaxial-base transistor designed to be used in power amplifier and switching applications. Its construction follows the basic form of a traditional BJT transistor and consists of a three-layer construction. The base of the transistor is a NPN layer, the collector is a NPN layer, and the emitter is a P-type layer. The arrangement of the layers forms a path for electrons to flow from the collector to the emitter when a small current is applied. The current will be amplified as it passes through the layers and will then be output from the emitter.

FMMT619TC transistors are designed for use in high-power audio amplifiers, switching applications, power supplies, and a variety of consumer electronics applications. In audio amplifiers, the transistor is designed to provide high-output power and excellent transient response. In switching applications, the transistor is designed to provide extremely fast switching times and high-speed logic while maintaining a high level of max power. In power supplies, the transistor is designed to provide efficient and reliable power while operating over a wide range of input voltage.

The FMMT619TC has a high gain and low-noise performance and operates over a wide temperature range of -40°C to +85°C. It has a low base-emitter saturation voltage and high collector-emitter breakdown voltage allowing for high power output and low power drops. It also has a high degree of immunity to transient over voltages and electromagnetic interference.

The working principle of the FMMT619TC is relatively straightforward. When a small current is applied across the transistor\'s base and collector, it creates an amplified current from the collector to the emitter. This amplified current will then be output from the emitter and into the device that the transistor is connected to. The power of the amplifier is determined by the size of the current being applied and the gain of the transistor.

Overall, the FMMT619TC is an ideal choice for a variety of different applications, from audio amplifiers and switching applications to power supplies and consumer electronics. Its combination of high-power output, fast switching times, wide temperature range, and low power consumption make it a great choice for a wide range of applications. In addition, its high gain and low-noise performance makes it the perfect choice for high-performance audio amplifier designs.

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