Allicdata Part #: | FMMT620TC-ND |
Manufacturer Part#: |
FMMT620TC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 80V 1.5A SOT23-3 |
More Detail: | Bipolar (BJT) Transistor NPN 80V 1.5A 160MHz 625mW... |
DataSheet: | FMMT620TC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1.5A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 200mV @ 50mA, 1.5A |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 300 @ 200mA, 2V |
Power - Max: | 625mW |
Frequency - Transition: | 160MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | FMMT620 |
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The FMMT620TC is an epitaxial PNP transistor that has been designed for general-purpose switching and amplifier applications. It is designed to operate with a collector-emitter voltage of up to 50V and can handle up to 1.5A of collector current. The FMMT620TC is manufactured using an epitaxial planar process for high current gain and low noise operation.
The FMMT620TC has two terminals for the collector and one terminal for the base. The collector is connected to the power source and the base is connected to the input signal. When the input signal is low, the transistor is turned off and no current flows through the collector. When the input signal is high, the transistor is turned on and current flows through the collector.
The FMMT620TC is used in many different applications including audio amplifiers, amplifier circuits, switching circuits, power supply circuits and motor control circuits. It can also be used in numerous digital circuits where fast switching is needed.
The FMMT620TC is also known as a bipolar junction transistor (BJT). It is composed of three layers of semiconductor material, making it a three terminal device. The base is the middle layer and acts as a gate controlling the input signal. The collector and emitter are the two other layers and are connected to the external power supply.
The working principle behind the FMMT620TC is based on the movement of electrons. When a voltage is applied to the base, it creates an electric field which attracts electrons from the emitter. These electrons are then drawn towards the collector where they are collected and create an output current.
The output current of the FMMT620TC depends on the amount of voltage applied to the base. The higher the voltage applied to the base, the stronger the electric field and the more electrons that will be attracted to the collector. The amount of current produced is also determined by the resistance of the load connected to the collector.
The FMMT620TC also has a wide range of features and characteristics. It has high switching speeds, low power consumption and can handle high collector-emitter voltages. It also has a high current gain, making it ideal for amplifiers and switching circuits.
In conclusion, the FMMT620TC is an epitaxial PNP transistor that is designed for general-purpose switching and amplifier applications. It has two terminals for the collector and one terminal for the base and is composed of three layers of semiconductor material. The working principle behind the FMMT620TC is based on the movement of electrons and the device has features such as high switching speeds, low power consumption and a high current gain.
The specific data is subject to PDF, and the above content is for reference
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