FMMT619TA Allicdata Electronics
Allicdata Part #:

FMMT619TR-ND

Manufacturer Part#:

FMMT619TA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 50V 2A SOT23-3
More Detail: Bipolar (BJT) Transistor NPN 50V 2A 165MHz 625mW S...
DataSheet: FMMT619TA datasheetFMMT619TA Datasheet/PDF
Quantity: 18000
Stock 18000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Power - Max: 625mW
Frequency - Transition: 165MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: FMMT619
Description

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FMMT619TA is a type of bipolar junction transistor (BJT). It is part of a class of transistors known as single transistors. A single transistor consists of three layers of alternating conductive and semiconductor material, usually arranged in the form of a sandwich. It is used in many electrical and electronic circuits, including radio frequency (RF) amplifiers, light-emitting diodes (LEDs), and integrated circuits.

The FMMT619TA is a NPN transistor with a maximum collector current of 30 milliamps and a maximum collector-emitter voltage of 45 volts. It has a hFE of 50 and a maximum collector power dissipation of 0.76 Watts. In addition, it has a collector cutoff current of 20 nanoamps and an operating temperature range of -55 to +150 degrees Celsius. It is also rated for a maximum storage temperature of -55 to +150 degrees Celsius.

The FMMT619TA is typically used as an amplifier in circuits. It can be used to amplify signals, as well as providing amplification for audio systems. It can be used to boost the power of a signal, allowing it to be successfully transmitted from one location to another. It can also be used to provide a voltage or current gain to allow signals to be transmitted over longer distances or at higher power levels.

The working principle of the FMMT619TA depends upon the movement of electrons. A voltage is applied to one side of the transistor, and this causes the electrons to move from one side to the other. As the electrons move, the electrical current increases and this is amplified. This amplifier is important in many circuits, for example, in the transistor radio it amplifies the radio frequency signal. This amplifying effect is exceeded by the current gain and the collector power, both of which are determined by the hFE rating.

The FMMT619TA can be used in a variety of applications and provide reliable amplification. It is an excellent choice for RF amplifiers, LEDs, and integrated circuits. Its low power consumption and superior performance make it an ideal choice for most applications. It is easy to use and integrate into circuits, making it suitable for DIY enthusiasts and professionals alike.

The specific data is subject to PDF, and the above content is for reference

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