FMMT918TC

The FMMT918TC is a double diffusion NPN silicon epitaxial planar transistor designed for use in cable and very high frequency radio frequency applications. This component is designed for use in applications up to 150MHz, making it ideal for higher frequency applications. It also features high current gain for excellent linearity.

The FMMT918TC is a RF transistor with two highly doped adherent layers of silicon trapped into a single structure. This enables it to be used as a bipolar junction transistor (BJT) which utilizes its ability to rapidly shut off and switch on the current. When it switches off the current, its JURD ratio is very low which in turn reduces potential noise and distortion.

The working principle of the FMMT918TC is based on PN junction. The complete ensemble constituting this transistor derives its electrical characteristics from the PN junction which is the essential component at the heart of the device. The internal structure of this device contains two semiconductive layers with an intermediate junction between them. The emitter is the first layer through which electrons flow and it is directly connected to the negative terminal or ground. These electrons are then injected into the base which requires an external bias voltage to conduct current, and eventually to the collector.

This device is ideal for use in car audio systems, digital TV transmitters & receivers, GPS systems, and VOR receiver systems. It is a powerful RF transistor which provides excellent linearity and high current gain, making it an ideal choice for those applications where low noise and excellent linearity are essential. This device is also widely used in portable radios, mobile communications and satellite transceiver applications in which high power and low noise levels are essential.

In conclusion, the FMMT918TC is a highly efficient device designed for use in numerous radio frequency applications. Its JURD ratio is very low which reduces potential noise and distortion. It also provides excellent linearity and high current gain for these applications. Its wide application field and working principle make it a popular and useful device for RF applications.