Allicdata Part #: | FQA55N10-ND |
Manufacturer Part#: |
FQA55N10 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 61A TO-3P |
More Detail: | N-Channel 100V 61A (Tc) 190W (Tc) Through Hole TO-... |
DataSheet: | FQA55N10 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 190W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2730pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 98nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 26 mOhm @ 30.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 61A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQA55N10 is a type of N-channel field-effect transistor (NFET) that is used in several electronic applications, such as power switching and voltage regulation. It is notable because of its low gate threshold voltage and low on-resistance, as well as its wide drain-source breakdown voltage (Vds range) and high-temperature buffer capability. The FQA55N10 is suitable for use as a load switch and in motor and DC-DC power management.
The FQA55N10 is a type of insulated-gate field-effect transistor (IGFET), which is a three-layer field-effect transistor (FET) composed of a source, gate and drain. It has two types of channels – an N-channel and a P-channel. In the FQA55N10, the N-channel type is used. Its working principle involves the opening and closing of an electric current filled channel between the source and the drain by applying a voltage to the gate. When the gate voltage is applied, the current channel opens as electrons form a conducting path between the source and drain, and when the gate voltage is reduced, the current channel closes and current conduction stops.
The FQA55N10 is a low-voltage FET, with a gate threshold voltage (Vgs) of -5.5V and a low on-resistance of 10 mΩ. It has a wide drain-source breakdown voltage (Vds) range of 14 to 20V, making it suitable for use in devices that require higher voltage. It also has a high-temperature buffer that allows it to operate efficiently at temperatures up to 125°C. This makes it well-suited for use as a power switch in devices that may be exposed to high temperatures.
The FQA55N10’s low gate voltage, low on-resistance, wide Vds range, and high-temperature buffer make it ideal for use in a variety of electronic applications, such as in power switching and voltage regulation. It can be used as a load switch, motor control, and in DC-DC power management. In power switching applications, it can be used to switch a low-voltage power supply on and off, providing regulated power for connected devices. In motor control applications, it can be used to control the speed and direction of a motor. And in DC-DC power management applications, it can be used to efficiently regulate the voltage supply. It is also used in a variety of other applications, such as computers, telecommunications, industrial automation and medical equipment.
In conclusion, the FQA55N10 is a low-voltage N-channel field-effect transistor that is used in a variety of electronic applications, such as power switching and voltage regulation. It has a low gate threshold voltage and low on-resistance, as well as a wide drain-source breakdown voltage range and high-temperature buffer capability. This makes it well-suited for use as a power switch, motor control, and in DC-DC power management.
The specific data is subject to PDF, and the above content is for reference
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