| Allicdata Part #: | FQA5N90_F109-ND |
| Manufacturer Part#: |
FQA5N90_F109 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 900V 5.8A TO-3P |
| More Detail: | N-Channel 900V 5.8A (Tc) 185W (Tc) Through Hole TO... |
| DataSheet: |  FQA5N90_F109 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | QFET® |
| Packaging: | Tube |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 900V |
| Current - Continuous Drain (Id) @ 25°C: | 5.8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 2.3 Ohm @ 2.9A, 10V |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1550pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 185W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-3PN |
| Package / Case: | TO-3P-3, SC-65-3 |
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The FQA5N90_F109 is a single N-channel enhancement mode power MOSFET manufactured by STMicroelectronics. It is designed for applications requiring real-time control and high switching frequencies, such as automotive and industrial motor control and home appliance and lighting control. This article explains the application field and working principle of the FQA5N90_F109.
The FQA5N90_F109 is a MOSFET (metal oxide semiconductor field effect transistor) with an integrated gate insulation layer. It is an enhancement mode power MOSFET, meaning that the device requires an additional voltage input to turn it on and allow current to flow through it. This additional voltage is called the gate-source voltage (Vgs).
The FQA5N90_F109 has a breakdown voltage of 90V, meaning that the device can withstand a maximum of 90V before it enters into a permanent breakdown state. Furthermore, it has a drain-source on-resistance of 5.4mOhms @4.5V Vgs, meaning that it has a very low resistance and can thus supply a large amount of current if required. This feature makes it ideal for heavy load applications such as automotive and industrial motor control.
The FQA5N90_F109 can also handle high switching frequencies as it has a fast switching speed of 35ns typ and a rise time of 22ns typ. Additionally, it has a low gate charge of 15nC max. This makes it well suited for applications requiring real-time control and high switching frequencies, such as home appliance and lighting control.
The FQA5N90_F109 works in a very simple way. When the gate-source voltage (Vgs) is applied, the device turns on and allows current to flow through it. This current is then diverted to the drain pin, thus enabling the device to act as a switch. When the Vgs is removed, the device turns off and current is no longer diverted through it.
In conclusion, the FQA5N90_F109 is a single N-channel enhancement mode power MOSFET designed for applications requiring real-time control and high switching frequencies, such as automotive and industrial motor control and home appliance and lighting control. It has a breakdown voltage of 90V, a low drain-source on-resistance of 5.4mOhms @4.5V Vgs, a fast switching speed of 35ns typ and a rise time of 22ns typ, and a low gate charge of 15nC max.
The specific data is subject to PDF, and the above content is for reference
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