FQI7N10TU Allicdata Electronics
Allicdata Part #:

FQI7N10TU-ND

Manufacturer Part#:

FQI7N10TU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 100V 7.3A I2PAK
More Detail: N-Channel 100V 7.3A (Tc) 3.75W (Ta), 40W (Tc) Thro...
DataSheet: FQI7N10TU datasheetFQI7N10TU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK (TO-262)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 40W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 350 mOhm @ 3.65A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The FQI7N10TU is a commonly used transistor in the electronics industry, particularly in the development and manufacturing of circuit boards and related applications. The device is a single-channel field-effect transistor, more commonly known as a MOSFET. The FQI7N10TU offers an excellent combination of low power demands and good current capacity.

A field-effect transistor works by conducting and controlling electric current between two terminals (drain and source). It contains three regions which trap the charge carriers: the source, the drain and the gate. The FQI7N10TU utilizes a metal-oxide-semiconductor field-effect transistor with an ion-implanted channel between the source and the drain. It accomplishes this using three electrodes: the gate, source, and drain.

When a voltage is applied to the source and drain terminals of the FQI7N10TU, an electric field is created between them. This electric field moves along the channel and experiences a reduction in strength on either side. This field controls the flow of current from the source to the drain. By applying an appropriate voltage to the gate of the FQI7N10TU, the flow of current can be controlled further.

The FQI7N10TU is often praised for offering superior electrical performance compared to other types of transistors. This is due to its low power consumption and extremely fast switching speed. The FQI7N10TU also has a low threshold voltage, allowing it to switch between a high and low impedance state quickly, even at relatively low voltages.

The FQI7N10TU is widely used in many different types of applications, including switching, modulation, and amplification in power supplies, audio amplifiers, motor control circuits, and industrial automation systems. It is also an ideal choice for switching current in high-frequency video and audio circuits, making it widely used in television and radio equipment.

The FQI7N10TU offers a number of advantages over other types of transistors due to its simplicity, reliability and small size. It is easy to use and has a wide operating temperature range, making it suitable for many different applications. It is also highly reliable, making it suitable for mission-critical applications.

The FQI7N10TU is an extremely cost-effective and reliable solution for a range of electronic applications. With its low power requirements and excellent current capacity, it is an ideal choice for a wide range of uses. Its fast switching speed and low threshold voltage make it suitable for a variety of applications, making it a popular choice for designers and engineers working on today\'s complicated and challenging projects.

The specific data is subject to PDF, and the above content is for reference

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