| Allicdata Part #: | FQI7N80TU-ND |
| Manufacturer Part#: |
FQI7N80TU |
| Price: | $ 2.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 800V 6.6A I2PAK |
| More Detail: | N-Channel 800V 6.6A (Tc) 3.13W (Ta), 167W (Tc) Thr... |
| DataSheet: | FQI7N80TU Datasheet/PDF |
| Quantity: | 955 |
| 1 +: | $ 1.82070 |
| 10 +: | $ 1.64493 |
| 100 +: | $ 1.32168 |
| 500 +: | $ 1.02800 |
| 1000 +: | $ 0.85177 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | I2PAK (TO-262) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.13W (Ta), 167W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1850pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 52nC @ 10V |
| Series: | QFET® |
| Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 3.3A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 6.6A (Tc) |
| Drain to Source Voltage (Vdss): | 800V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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FQI7N80TU is a kind of transistor which belongs to the family of Field Effect Transistors (FETs) and MOSFETs, namely the Single FETs family. FQI7N80TU is an N-channel MOSFET device, which is made of insulated-gate field-effect semiconductor with a vertical double diffused structure.
This FQI7N80TU MOSFET helps to provide a much more efficient and cost-effective solution for signal switching, amplifier, pulse-modulated applications, when compared to the traditional transistor. This kind of device is also known for its low on-state resistance, excellent switching performance and high temperature performance. As a result, FQI7N80TU transistors are being used in a wide range of different scenarios and applications.
The application field of this FQI7N80TU MOSFET is extensive and varied. It is often used in industrial facilities like electric energy controllers and current circuits. It is also used in motor drive and power control circuits, such as cooling fans, total current measurement and control, motor speed control and so on. Moreover, telecom and automotive application also use FQI7N80TU transistors for signal control. In addition, FQI7N80TU is also a great choice for other operations, such as low-noise amplifier designed in audio frequency band, amplification and mute control in radio, beam limitation circuit and other different audio frequency band.
The working principle of this FQI7N80TU is that the current through the device is controlled by the voltage level applied to the gate. The FQI7N 80TU layout is so designed that it has an insulated gate, which can attract or repel the electrons from the channel and control the flow of electrons from the source to drain terminal. The working of the device is based on this principle only. The FQI7N 80TU has a thicker silicon dioxide layer between the source and the drain, which helps in improving the electrical characteristic of the device. This FQI7N 80TU has low on-state resistance, excellent switching and high temperature performance, which make it suitable for various applications on its own.
Due to its wide application field, excellent switching performance and low on-state resistance, this FQI7N 80TU has become a top choice for many users. The FQI7N 80TU MOSFET is also affordable and highly available, making it a great pick for consumers. It is highly reliable and can withstand harsh conditions, including high temperatures and Current surges, which make it an ideal choice for industrial applications.
The specific data is subject to PDF, and the above content is for reference
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FQI7N80TU Datasheet/PDF