FQT3P20TF-SB82100 Discrete Semiconductor Products

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The FQT3P20TF-SB82100 is a n-channel enhancement mode field effect transistor (FET) designed and manufactured as a discrete component by Vishay Siliconix. This highly efficient device is primarily used as a low voltage power switch, acting as a low impedance connection between two nodes when enabled, and a high impedance connection when disabled.

Applications

The FQT3P20TF-SB82100 can be found in a variety of applications, from low-power switching to driving LED lighting. In more specific applications, the FQT3P20TF-SB82100 works well for small power converters and power supply circuits. It can also be used in low voltage and low power level audio amplifiers, AC-DC/DC-AC motors, and as a relay replacement.

Compact SOT-223 Package

The FQT3P20TF-SB82100 is housed in the compact surface-mounted SOT-223 package, which measures just 2.2 mm x 3.2 mm x 1.2 mm. Due to its small size and low power consumption, it is ideal for low-profile and space-constrained applications. This package size also reduces the overall footprint on printed circuit boards, allowing designers to conserve space in otherwise crowded designs.

Specifications

The FQT3P20TF-SB82100 supports a drain current of 10 A and an avalanche energy of 30 mJ. The maximum drain source voltage is 30 V, with a breakdown voltage (BVDSS) of 30 V. The drain-source on-resistance (RDSon) is relatively low at 0.00049 Ω, making it an effective low power switch. The device has a threshold voltage of 0.9 V, a maximum operating temperature of 175℃, and a total gate charge (Qg) of 0.7 nC.

Working Principle

The FQT3P20TF-SB82100 operates on an enhancement mode, meaning that it is off when the gate source voltage is 0V. To enable the device, the gate source voltage must be higher than the threshold voltage (VGSth) while the drain source voltage is held constant. Once the threshold voltage is reached, the device will conduct drain current, allowing the gate source voltage to deplete to 0V. To turn off the device, the gate source voltage must be reduced to a voltage lower than the threshold voltage.

Conclusion

The FQT3P20TF-SB82100 is a low voltage n-channel enhancement mode field effect transistor featuring a compact SOT-223 package size and low power consumption. It is used in a variety of applications, from low-power switching to LED lighting, and can be used as a relay replacement in small power converters and AC-DC/DC-AC motors.

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