FQT3P20TF Allicdata Electronics

FQT3P20TF Discrete Semiconductor Products

Allicdata Part #:

FQT3P20TFTR-ND

Manufacturer Part#:

FQT3P20TF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 200V 0.67A SOT-223
More Detail: P-Channel 200V 670mA (Tc) 2.5W (Tc) Surface Mount ...
DataSheet: FQT3P20TF datasheetFQT3P20TF Datasheet/PDF
Quantity: 24000
Stock 24000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223-4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 335mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 670mA (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FQT3P20TF belongs to a type of single type Field Effect Transistor (FET). FETs are mainly used as voltage-controlled switches due to their low-power consumption, wide operating bandwidth, and simple circuit structures. They are commonly used for power supply regulation, signal conditioning, RF signal amplification, and switching applications.

FQT3P20TF is a Field Effect Transistor with two N-type terminals, a drain and a source, plus one P-type terminal which is known as the gate. The semiconductor material within the FET is heavily doped with impurities and is called an N-type dopant. This is why both the source and drain terminals are N-type. The gate terminal is made out of P-type material and has a negative terminal voltage applied to it. This voltage is then used to control the flow of electrons through the semiconductor channel. The FET is operated in a way so that when the gate input is low, the channel shuts off, preventing the flow of electrons. When the gate voltage is increased, the channel opens, allowing the electrons to flow freely.

The FQT3P20TF has a very wide range of applications, including but not limited to motor control and power supply regulation, signal processing, RF power amplification, switching applications, and DC-DC conversion. The FQT3P20TF is particularly well suited for power applications due to its low on-resistance and high voltage ratings. Additionally, its low gate charge makes it particularly well suited for high frequency switching applications.

The FQT3P20TF has a high-speed switching capability, as it has a fast switching speed and an option for parallel operation for higher power capability. Compared with other FETs, it has a lower gate-drain capacitance, which allows for high-frequency switching and improved immunity from noise. The FQT3P20TF also has a very low on-resistance, which makes it suitable for use in motor control and power supply regulation applications. Additionally, the FQT3P20TF can be used in switching applications, as it has a relatively low gate and drain capacitance, which allows for fast switching speeds.

The working principle of the FQT3P20TF is relatively simple. By changing the bias voltage applied to the gate terminal, the conductivity of the N-type semiconductor channel will be adjusted, thus controlling the flow of electrons in the channel. The voltage applied to the gate will also determine the impedance (resistance) of the FET, and this can be used to adjust the power delivered to a device.

Overall, the FQT3P20TF is a very useful FET that can be utilized in a wide range of applications. Its low on-resistance, low gate charge, and high-speed switching capabilities make it a good choice for power regulation and motor control, as well as signal processing and switching applications. Additionally, its ease of operation and low cost make it a very attractive option for all applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "FQT3" Included word is 2
Part Number Manufacturer Price Quantity Description
FQT3P20TF ON Semicondu... -- 24000 MOSFET P-CH 200V 0.67A SO...
FQT3P20TF-SB82100 ON Semicondu... 0.0 $ 1000 MOSFET P-CH 200V 0.67A SO...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics