FQT3P20TF Discrete Semiconductor Products |
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Allicdata Part #: | FQT3P20TFTR-ND |
Manufacturer Part#: |
FQT3P20TF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 200V 0.67A SOT-223 |
More Detail: | P-Channel 200V 670mA (Tc) 2.5W (Tc) Surface Mount ... |
DataSheet: | FQT3P20TF Datasheet/PDF |
Quantity: | 24000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223-4 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 250pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 8nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 2.7 Ohm @ 335mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 670mA (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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FQT3P20TF belongs to a type of single type Field Effect Transistor (FET). FETs are mainly used as voltage-controlled switches due to their low-power consumption, wide operating bandwidth, and simple circuit structures. They are commonly used for power supply regulation, signal conditioning, RF signal amplification, and switching applications.
FQT3P20TF is a Field Effect Transistor with two N-type terminals, a drain and a source, plus one P-type terminal which is known as the gate. The semiconductor material within the FET is heavily doped with impurities and is called an N-type dopant. This is why both the source and drain terminals are N-type. The gate terminal is made out of P-type material and has a negative terminal voltage applied to it. This voltage is then used to control the flow of electrons through the semiconductor channel. The FET is operated in a way so that when the gate input is low, the channel shuts off, preventing the flow of electrons. When the gate voltage is increased, the channel opens, allowing the electrons to flow freely.
The FQT3P20TF has a very wide range of applications, including but not limited to motor control and power supply regulation, signal processing, RF power amplification, switching applications, and DC-DC conversion. The FQT3P20TF is particularly well suited for power applications due to its low on-resistance and high voltage ratings. Additionally, its low gate charge makes it particularly well suited for high frequency switching applications.
The FQT3P20TF has a high-speed switching capability, as it has a fast switching speed and an option for parallel operation for higher power capability. Compared with other FETs, it has a lower gate-drain capacitance, which allows for high-frequency switching and improved immunity from noise. The FQT3P20TF also has a very low on-resistance, which makes it suitable for use in motor control and power supply regulation applications. Additionally, the FQT3P20TF can be used in switching applications, as it has a relatively low gate and drain capacitance, which allows for fast switching speeds.
The working principle of the FQT3P20TF is relatively simple. By changing the bias voltage applied to the gate terminal, the conductivity of the N-type semiconductor channel will be adjusted, thus controlling the flow of electrons in the channel. The voltage applied to the gate will also determine the impedance (resistance) of the FET, and this can be used to adjust the power delivered to a device.
Overall, the FQT3P20TF is a very useful FET that can be utilized in a wide range of applications. Its low on-resistance, low gate charge, and high-speed switching capabilities make it a good choice for power regulation and motor control, as well as signal processing and switching applications. Additionally, its ease of operation and low cost make it a very attractive option for all applications.
The specific data is subject to PDF, and the above content is for reference
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