
Allicdata Part #: | FQT4N20TF-ND |
Manufacturer Part#: |
FQT4N20TF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 200V 0.85A SOT-223 |
More Detail: | N-Channel 200V 850mA (Tc) 2.2W (Tc) Surface Mount ... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223-4 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.2W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 220pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 6.5nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 425mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 850mA (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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FQT4N20TF is a type of Field Effect Transistor (FET) commonly referred to as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is a type of single-gate FET, which means it has only one gate and it is often used as a switch. MOSFETs aid in the management of electrical signals, which is why they are often called voltage-controlled devices.
The FQT4N20TF has a number of properties that make it a particularly desirable choice as a MOSFET. Firstly, it has a low threshold voltage, which ensures that it is able to switch between on and off states much more quickly than other types of FET. It also has a fast switching time, which is beneficial when controlling high-frequency signals. Secondly, it has a low on-state resistance, which makes it ideal for high-current applications. Finally, it has a low input capacitance that helps to reduce the amount of power that is wasted during operations.
The main application field for the FQT4N20TF is power switching. It is primarily used for controlling the flow of high voltage and current, as well as for switching between electronic systems and circuits. It can also be used to control the output of low-frequency signals, such as in audio amplifiers.
The working principle behind the FQT4N20TF is based on the principles of quantum mechanics. It consists of an underlying channel that is formed by the presence of mobile charge carriers. The channel is insulated by a gate, which is what determines the conductivity of the channel. When a voltage is applied across the gate, it creates a potential difference between the drains and the source, which affects the flow of current. In this way, the FQT4N20TF is able to control the flow of current by varying the gate voltage.
In addition to its use in power switching, the FQT4N20TF can also be used in other applications, such as logic gates and logic circuits. In logic circuits, the FQT4N20TF acts as an amplifier, as it is able to amplify signals and control their output. In logic gates, the FQT4N20TF is able to control the flow of current between electronic components, which aids in the operation of the gate. Finally, the FQT4N20TF can be used as a switch, as it is able to quickly switch between on and off states.
The FQT4N20TF is an invaluable device for many applications and is a very reliable and versatile component of any circuit. Its low threshold voltage, fast switching speed, low on-state resistance, and low input capacitance makes it an excellent choice for high-current applications. Its ability to amplify signals and control their output makes it a useful device in logic circuits and logic gates. Finally, its ability to quickly switch between on and off states makes it a great choice for power switching. The FQT4N20TF is a great choice for anyone seeking a reliable and versatile FET.
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