FQT4N25TF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FQT4N25TF is a field-effect transistor (FET) that belongs to the class of metal-oxide semiconductor (MOS) FETs. It is a single device, meaning it has only one active element. Transistors of this type are current amplifying or switching devices, used to drive loads or circuits at high frequencies. FETs are usually used in electronic systems to control the opening and closing of a circuit.

The FQT4N25TF has a circularly symmetric device thermal-resistance characteristic, which helps reduce power consumption in applications with high switching frequencies. The device is designed with a low on-resistance and is capable of delivering up to 500 mA over a 25 V operating range. This makes the device suitable for use in high current and high power applications such as power supplies, motor control, and other industrial applications.

The FQT4N25TF device is manufactured utilizing a proprietary, highly-reliable trench-gate CMOS process. The device is protected with a new, thick, isolation layer to reduce on-resistance, making it suitable for high-performance applications. The remarkably low switching times, low on-resistance, and large capacitance make the FQT4N25TF device suitable for high-frequency applications.

The FQT4N25TF has a drain-source voltage rating of 25 V and a drain current of 500 mA. It also has a high breakdown voltage, low capacitance and a high gate threshold voltage. The device has a high switching time, with an off-state leakage current rating of -100 nA and an ON-state resistance rating of 0.5 Ohms.

The FQT4N25TF device is used for a number of different applications, including power supplies, motor control, invertors, amplifiers, DC-DC converters, battery chargers, automatic gain control amplifiers and high-speed logic gates. The device is primarily used for high current and high power operations, where its low on-resistance and high switching frequency makes it suitable for these applications.

The working principle of the FQT4N25TF is relatively simple. The device is composed of an N-type source and a P-type drain, separated by an insulating layer. When a current is applied to the gate terminal, a conductive channel is formed between the source and the drain, allowing current to flow between them. The current flow is controlled by a voltage applied to the gate terminal, which adjusts the amount of current that can flow through the channel.

The FQT4N25TF is a common, reliable solution for high current and high power applications, such as motor control, power supplies, and inverters. It is designed for flexibility and convenience, and its low on-resistance and high switching frequency capabilities make it suitable for continuous-high current and high-power operations.

The specific data is subject to PDF, and the above content is for reference