Allicdata Part #: | FQU4N20TU-ND |
Manufacturer Part#: |
FQU4N20TU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 200V 3A IPAK |
More Detail: | N-Channel 200V 3A (Tc) 2.5W (Ta), 30W (Tc) Through... |
DataSheet: | FQU4N20TU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 220pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 6.5nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Field effect transistors (FETs) are the most commonly used type of transistor, and due to their high adaptability, they are found in a variety of applications. The FQU4N20TU is one of the many FETs that have different characteristics and uses, which makes them suitable for a variety of applications.
The FQU4N20TU is an N-channel enhancement mode FET, meaning that it is used when a high gain is required. The FET is used to control the flow of electrons through an electrical circuit by providing a small electrical current to the gate. When the gate receives the small current, it creates an electric field, which allows the electrons to flow through the channel with a greater efficiency. This process makes FETs extremely efficient and able to handle a higher load compared to other types of transistors.
The FQU4N20TU has a breakdown voltage of 200V, meaning it is able to handle higher voltages without breaking down or damaging the transistor. It also has a low drain-to-source capacitance, allowing it to perform faster and more accurately. This makes it ideal for applications that require speed and precision. Additionally, the FQU4N20TU has a low gate threshold voltage, allowing it to be used in circuits that use low voltage sources.
The FQU4N20TU is ideal for use in audio amplifiers, power supply circuits, MOSFET motor control, low-voltage latching circuits, and switching power supplies. Audio amplifiers use FETs due to their low input capacitance and low noise, making them ideal for applications that require high fidelity sound. Power supply circuits use FETs due to their low drain-to-source resistance and voltage stability, allowing them to produce a steady current when powering heavy-duty components. MOSFET motor controls are used to provide precise control over the rotation speed of motorised devices. Low-voltage latching circuits use FETs due to their low gate threshold voltage, allowing them to be connected to low-voltage sources. Lastly, switching power supplies use FETs due to their low power consumption and low switching losses, allowing them to efficiently convert AC power into DC power.
In summary, FQU4N20TU is an N-channel enhancement mode FET which is suitable for many applications, such as audio amplifiers, power supply circuits, MOSFET motor control, low-voltage latching circuits, and switching power supplies. Due to its low drain-to-source capacitance, low gate threshold voltage, and high breakdown voltage, the FQU4N20TU is able to handle higher power and perform more accurately than other types of transistors. This makes it a preferred choice for many industries and applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FQU4N20TU | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 200V 3A IPAKN... |
FQU4N25TU | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 250V 3A IPAKN... |
FQU4P25TU | ON Semicondu... | -- | 1000 | MOSFET P-CH 250V 3.1A IPA... |
FQU4N50TU | ON Semicondu... | -- | 1000 | MOSFET N-CH 500V 2.6A IPA... |
FQU4N50TU-WS | ON Semicondu... | -- | 10 | MOSFET N-CH 500V 2.6A IPA... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...