FQU4N50TU-WS

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FQU4N50TU-WS is a silicon N-Channel Enhancement Mode MOSFET, specifically a type of field-effect transistor (FET). As such, it is distinguished primarily by its lack of need for a control current and its high input impedance. Its designations, FQU4N50TU-WS, stand for field-effect transistor and signify that it is an N-channel 4A, 50V transistor.

A MOSFET consists of two terminals, an “input” and an “output,” with a semiconductor “gate” in between. If an electric signal, or “gate voltage,” is applied to the gate, then a channel is created between the input and output terminals. This channel provides a current path from the input to the output. The greater the signal applied to the gate, the larger the channel becomes, allowing for higher current flow.

The FQU4N50TU-WS is an enhancement mode MOSFET, meaning that it can be turned on without a voltage applied to the gate. In other words, no current is needed to activate it and the addition of a voltage to the gate increases the channel resistance, thus reducing current flow between the two terminals. In contrast, depletion mode MOSFETs require a voltage applied to the gate to be turned on and off, meaning that they require more current to operate.

The FQU4N50TU-WS MOSFET is primarily used as a switch and is most often found in applications where low power is needed for a low voltage circuit. Some of the most common applications for the FQU4N50TU-WS include power supplies, motor control, LED lighting, and automotive systems. Additionally, due to its low power consumption and cost-effectiveness, the FQU4N50TU-WS is often used in low-cost consumer electronics such as cell phones, computers, and game systems.

In addition to its low power consumption, the FQU4N50TU-WS also possesses a high input impedance that is advantageous to many applications. This high input impedance is especially beneficial for power supplies as it allows for longer battery life since less current needs to be used to achieve the desired output. In addition, the FQU4N50TU-WS has a lower reverse current leakage when compared to other MOSFETs, further contributing to its efficiency and cost-effectiveness.

The FQU4N50TU-WS is a versatile MOSFET, having a variety of applications and benefits. Due to its small size, its customizable rating, and its low power consumption, it is a popular choice for many projects, especially those dealing with low voltage, high current applications. Additionally, its high input impedance creates improved efficiency compared to other FETs, as well as improved battery life. Its enhance mode operates without a control current, making it even more efficient than other MOS transistors. The FQU4N50TU-WS is an ideal solution for many projects.

The specific data is subject to PDF, and the above content is for reference