FS100R07N2E4BOSA1 Allicdata Electronics
Allicdata Part #:

FS100R07N2E4BOSA1-ND

Manufacturer Part#:

FS100R07N2E4BOSA1

Price: $ 60.89
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULE VCES 600V 100A
More Detail: IGBT Module Trench Field Stop Three Phase Inverter...
DataSheet: FS100R07N2E4BOSA1 datasheetFS100R07N2E4BOSA1 Datasheet/PDF
Quantity: 1000
30 +: $ 55.34470
Stock 1000Can Ship Immediately
$ 60.89
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 100A
Power - Max: 335W
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 6.2nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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The FS100R07N2E4BOSA1 is an Insulated Gate Bipolar Transistor (IGBT) module. This type of device is a versatile electronic control element that can handle both high- and low-power loads. It is suitable for numerous applications, ranging from medium-power switching to high-power control. The module is designed to provide superior efficiency and longevity in demanding applications.

The FS100R07N2E4BOSA1 is a monolithic IGBT module that consists of six reverse-connected IGBTs, one of which is an anti-parallel diode. All components are isolated from each other electrically. The module offers a wide operating temperature range of -40°C to +105°C, and its high-side and low-side cells have identical characteristics. This makes it the ideal choice for various types of control applications.

The working principle of IGBT modules is based on the principle of a thyristor. When the gate voltage is a positive voltage and the external current increases, the thyristor is fired, and the IGBT module’s output voltage drops. The IGBT module\'s output current can be increased by increasing the gate voltage. The cell gates provide an adjustable current gain control, while the main transistor gates control the output current magnitude.

The FS100R07N2E4BOSA1 IGBT module can be used in a variety of applications, including motor drives, lighting control, welding machines, power electronics, HVAC, and power supplies. It is suitable for use in AC and DC loads with up to 1,400 volts of nominal voltage and with power levels up to 100A. This module is also widely used in industrial and consumer electronic equipment. Due to its high switching speed and high efficiency, it is the ideal choice for applications requiring efficient, reliable, and fast control.

The FS100R07N2E4BOSA1 IGBT module is a reliable, energy-efficient device that is able to withstand many harsh operating conditions. Its superior design ensures a long service life, making it a reliable choice for most demanding applications. With its excellent performance, superior efficiency, and quality construction, this IGBT module is an excellent choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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