Allicdata Part #: | FS100R17N3E4B11BOSA1-ND |
Manufacturer Part#: |
FS100R17N3E4B11BOSA1 |
Price: | $ 111.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 600V 100A |
More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
DataSheet: | FS100R17N3E4B11BOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 101.32800 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
Current - Collector (Ic) (Max): | 100A |
Power - Max: | 600W |
Vce(on) (Max) @ Vge, Ic: | 2.3V @ 15V, 100A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 9nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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The FS100R17N3E4B11BOSA1 is a transistor module with Industrial Grade 4 rating. It is one of the FS100R17N3E4B11BOSA series of IGBT Modules by Fuji Electric. Its power dissipation limit is 1200 W and its junction temperature rating is 150°C. The FS100R17N3E4B11BOSA1 is also equipped with flat-base type drilling, a robust packaging, and an insulation cover with built-in ground connections.
The industrial-grade FS100R17N3E4B11BOSA1 is suitable for applications in General Motor Control, Automotive, Industrial and Consumer applications, HVAC, Power Conversion and similar power-electronic applications. This module is designed to provide protection against short-circuits, overvoltage and overtemperature, ensuring reliability and safety in operation of the circuit.
The FS100R17N3E4B11BOSA1 module has an isolating base plate that ensures a solid electrical isolation and can withstand high AC/DC voltages up to 1700V. The FS100R17N3E4B11BOSA1 offers a high-efficiency performance, with up to 17 A of current capability, when operating at a peak voltage of 800 V. It features high current drive capability with the built-in N-channel MOSFETs switching up to 5 kHz in high-side mode operations.
The FS100R17N3E4B11BOSA1 has a unique structure model, featuring a high quality substrate material with a low thermal resistance for improved heat dissipation and optimised thermal management. This module uses a 3-phase bridge circuit, with a single power supply design, allowing for AC/DC conversion and high power density control. The control signal and drive circuitry are designed over the base plate surface, which allows the FS100R17N3E4B11BOSA1 to be easily connected to the circuit board.
The FS100R17N3E4B11BOSA1 module can provide the user with a highly reliable, controllable and cost-effective solution that is suitable for most industrial and consumer applications. The primary working principle behind the module is that it is designed to act as a switch to control the current flow to the device being driven. This is accomplished by using the components built in to the device, such as the Power MOSFETs, which switch on and off depending on the control signal sent from the driver. When the module is in the off state, no current is allowed to flow, but when the signal is given, the MOSFETs activate and the current is allowed to flow. This makes the FS100R17N3E4B11BOSA1 module ideal for AC/DC conversion and high current drive control.
The FS100R17N3E4B11BOSA1 is ideal for applications where a reliable and effective controllable device is required. A wide range of applications can benefit from the high efficiency, robust construction and wide voltage and current ratings, making the FS100R17N3E4B11BOSA1 a reliable and powerful choice for a range of applications.
The specific data is subject to PDF, and the above content is for reference
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