FS100R12PT4BOSA1 Allicdata Electronics
Allicdata Part #:

FS100R12PT4BOSA1-ND

Manufacturer Part#:

FS100R12PT4BOSA1

Price: $ 98.54
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULE VCES 600V 100A
More Detail: IGBT Module Trench Field Stop Three Phase Inverter...
DataSheet: FS100R12PT4BOSA1 datasheetFS100R12PT4BOSA1 Datasheet/PDF
Quantity: 1000
6 +: $ 89.57760
Stock 1000Can Ship Immediately
$ 98.54
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 135A
Power - Max: 500W
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 6.3nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Transistors are electrical devices used in a wide variety of electronic circuits and systems. Specifically, IGBTs (Insulated Gate Bipolar Transistors) are considered as a type of power transistor and as such have numerous power applications. One IGBT module in particular, FS100R12PT4BOSA1, has a range of applications and is used in a variety of electrical equipments.

The FS100R12PT4BOSA1 IGBT module is mainly utilized in power motor drives, where its superior functionality aids in controlling the speed and torque of the motor. It is capable of reverse current blocking and can support high current and high voltage applications. Additionally, the switch speeds of this IGBT module are fast, thereby providing for smoother transitions into on and off states.

The working principle of this IGBT module is based on the fact that it can serve as both a voltage and current controlled switch. In order to do so, its base-emitter junction must be forward biased, while its collector-emitter junction needs to be reverse biased. This biasing is caused by applying a positive voltage to the IGBT gate terminal, which in turn allows current to pass. Essentially, when a voltage higher than the breakdown voltage is applied to the IGBT gate, a current flows through the transistor and turns it on.

A further characteristic of the FS100R12PT4BOSA1 IGBT module is that it is does not require force turn-offs. When the gate signal is removed, it will naturally turn off without the need for any extra control signals. Moreover, this type of IGBT module has a higher current capacity and can switch high frequency signals, meaning it is also ideal for high frequency switching power supply applications.

Overall, the FS100R12PT4BOSA1 IGBT module is an ideal choice for applications requiring current and voltage control in both motor driver and switching power supply circuits. Its ability to block reverse current and its consistent on/off switching operation make it a highly functional and reliable electrical component.

The specific data is subject to PDF, and the above content is for reference

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