Allicdata Part #: | FS100R12PT4BOSA1-ND |
Manufacturer Part#: |
FS100R12PT4BOSA1 |
Price: | $ 98.54 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 600V 100A |
More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
DataSheet: | FS100R12PT4BOSA1 Datasheet/PDF |
Quantity: | 1000 |
6 +: | $ 89.57760 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 135A |
Power - Max: | 500W |
Vce(on) (Max) @ Vge, Ic: | 2.15V @ 15V, 100A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 6.3nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Transistors are electrical devices used in a wide variety of electronic circuits and systems. Specifically, IGBTs (Insulated Gate Bipolar Transistors) are considered as a type of power transistor and as such have numerous power applications. One IGBT module in particular, FS100R12PT4BOSA1, has a range of applications and is used in a variety of electrical equipments.
The FS100R12PT4BOSA1 IGBT module is mainly utilized in power motor drives, where its superior functionality aids in controlling the speed and torque of the motor. It is capable of reverse current blocking and can support high current and high voltage applications. Additionally, the switch speeds of this IGBT module are fast, thereby providing for smoother transitions into on and off states.
The working principle of this IGBT module is based on the fact that it can serve as both a voltage and current controlled switch. In order to do so, its base-emitter junction must be forward biased, while its collector-emitter junction needs to be reverse biased. This biasing is caused by applying a positive voltage to the IGBT gate terminal, which in turn allows current to pass. Essentially, when a voltage higher than the breakdown voltage is applied to the IGBT gate, a current flows through the transistor and turns it on.
A further characteristic of the FS100R12PT4BOSA1 IGBT module is that it is does not require force turn-offs. When the gate signal is removed, it will naturally turn off without the need for any extra control signals. Moreover, this type of IGBT module has a higher current capacity and can switch high frequency signals, meaning it is also ideal for high frequency switching power supply applications.
Overall, the FS100R12PT4BOSA1 IGBT module is an ideal choice for applications requiring current and voltage control in both motor driver and switching power supply circuits. Its ability to block reverse current and its consistent on/off switching operation make it a highly functional and reliable electrical component.
The specific data is subject to PDF, and the above content is for reference
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