Allicdata Part #: | FS100R07N3E4BOSA1-ND |
Manufacturer Part#: |
FS100R07N3E4BOSA1 |
Price: | $ 75.38 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 600V 100A |
More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
DataSheet: | FS100R07N3E4BOSA1 Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 68.53080 |
Series: | -- |
Part Status: | Last Time Buy |
IGBT Type: | Trench Field Stop |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 650V |
Current - Collector (Ic) (Max): | 100A |
Power - Max: | 335W |
Vce(on) (Max) @ Vge, Ic: | 1.95V @ 15V, 100A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 6.2nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IGBT Modules have been quite popular among the electrical and electronics engineering field and the FS100R07N3E4BOSA1 is one of the most sought-after products in the market. This device has a number of advantages that make it a popular choice for many applications. It is especially useful for applications related to power control and conversion. In this article, we will take a look at the application field and working principle of the FS100R07N3E4BOSA1.
The FS100R07N3E4BOSA1 is an insulated gate bipolar transistor module. It is used for the control and conversion of power in a variety of applications. The device consists of an insulated gate FET (field effect transistor) and a bipolar power transistor. It has a rated voltage of up to 700 volts and a current rating of up to 100 amperes. Because of its high-powered capabilities, the FS100R07N3E4BOSA1 is often used to increase the efficiency of controls and to reduce energy consumption in a lot of applications.
The FS100R07N3E4BOSA1 is designed with a low inductance module which has the ability to minimize common-mode noise levels. It also has a high conduction EMC filter that allows it to provide excellent signal isolation. The device has a low threshold voltage that helps to keep power consumption low. The module also features an insulated gate bias variation structure that provides excellent thermal and electrical performance. Its wide output frequency range makes it suitable for use in applications at different frequencies.
The FS100R07N3E4BOSA1 can be used in a variety of applications. It is commonly used for motor control, motion control, power conversion, and high-frequency switching applications. It can also be used for power factor correction, harmonic filters, and other similar operations. It is often used as a bypass breaker to protect against overloading an electric current.
The working principle of the FS100R07N3E4BOSA1 is relatively simple. The device uses an external voltage source to power an electron flow within the transistor. When the external voltage is applied, the gate electrode will become positive and will attract electrons to the collector. This creates an amplifier effect that can be used to control the current in the device. The voltage at the gate will be changed according to the signal that is applied to the gate, which can be used to modulate both the output current and the output voltage.
The FS100R07N3E4BOSA1 is a highly reliable, efficient, and cost-effective device that can be used in a variety of applications. Its wide range of features makes it ideal for applications related to power control and conversion. It is particularly popular in the motor control and motion control applications, as well as for power factor correction and harmonic filters. Its low noise levels and excellent signal isolation capabilities are also highly praised by users.
The specific data is subject to PDF, and the above content is for reference
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