FS100R17N3E4BOSA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FS100R17N3E4BOSA1 is an insulated gate bipolar transistor (IGBT) module, a type of power transistor that utilizes both an insulated gate and a base terminal to control current flow. This type of power transistor, most often utilized for applications that require high voltage and high current handling, has found wide application in industry. In fact, it is often considered a “workhorse” in industrial and commercial applications such as motor control, welding, power conversion and rectification, lighting, power supplies, and power factor correction.

An IGBT module, like the FS100R17N3E4BOSA1, contains several IGBT devices built onto a single form factor. This allows designers to quickly configure sophisticated power electronic systems with a minimal number of components and design considerations. Additionally, IGBT modules provide protection against current and voltage overload, as well as offering faster switching times and higher efficiency as compared to other transistor modules.

The FS100R17N3E4BOSA1 is a 4-in-1 IGBT module, with each element rated at up to 100 Amps, 1700 Volts, and 3.2 milliohms for a total of 400 Amps, 6800 Volts, and 12.8 milliohms for the module as a whole. This module is also equipped with a noble metal oxide film (NMOS) free-wheeling diode that can be used to protect from short circuit and AC/DC line transits. The integral freewheeling diode ensures not only that circuit protection is in place, but also increases the overall system efficiency.

In operation, the FS100R17N3E4BOSA1 works very similarly to other IGBT modules. It consists of two voltage terminals connected to an insulation gate and a base electrode, which both control the current path. Upon application of a gate bias voltage, a low resistance current path is created between the voltage terminals, allowing current to pass through the device. As the voltage at the gate terminal is increased, the current flow is further enhanced, thus allowing the device to act as an amplifier.

The FS100R17N3E4BOSA1 is designed for applications with high current and/or high voltage requirements such as power conversion, rectification, motor control, lighting, welding, and power factor correction. It can also be used in situations where protection against current and voltage overload is necessary, or when a very fast switching time is desired. Its high efficiency, robust construction, and integral diode make it an ideal choice for these types of applications.

As the demand for higher power and higher efficiency grows, IGBT modules such as the FS100R17N3E4BOSA1 are more and more in demand. With its high current rating, its wide voltage range, and its integral protection diode, this module is well suited for demanding applications. With its superior performance over traditional transistors and other IGBT modules, it is quickly becoming a “workhorse” in many industrial and commercial applications.

The specific data is subject to PDF, and the above content is for reference