Allicdata Part #: | FS100R12KE3_B3-ND |
Manufacturer Part#: |
FS100R12KE3_B3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT FS100R12KE3B3NOSA1 |
More Detail: | IGBT Module NPT Three Phase Inverter 1200V 140A 48... |
DataSheet: | FS100R12KE3_B3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Part Status: | Obsolete |
IGBT Type: | NPT |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 140A |
Power - Max: | 480W |
Vce(on) (Max) @ Vge, Ic: | 2.15V @ 15V, 100A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 7.1nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
?FS100R12KE3_B3 IGBT module is a type of transistor that is suitable for various power electronics applications due to it’s low on-state voltage drop and high efficiency. The module is comprised of a conductive base plate and multiple insulated-gate bipolar transistors (IGBTs). IGBTs are a combination of BJT and field-effect (MOSFET) transistors that have the switching properties of MOSFETs and the current capabilities of BJTs, making them an extremely versatile component in the field of power electronics. When compared with other components like MOSFETs, they have a much stem and faster switching time, lower losses and can operate at higher junction temperatures with higher current ratings per chip. In power electronics, FS100R12KE3_B3 IGBT module is used in a variety of applications due to its high efficiency and low dropout voltage. For example, it is used in switch-mode power supplies, converters, motor drives, UPS (uninterruptible power supplies) systems, and other various power applications. The module is advantageous for high power applications due to its reverse recovery characteristics and an ability to switch high currents rapidly. The working principle of FS100R12KE3_B3 IGBT module is based on the bipolar junction transistor (BJT) but it has two main differences. The first difference is a built-in gate source that requires a lower forward gate-source voltage (VGS) to switch on the device and a higher voltage to turn it off. The second difference is the presence of a very thick oxynitride layer that acts as an insulator between the gate electrode and the semiconductor junctions, while the BJT uses a much thinner insulating layer. This allows FS100R12KE3_B3 module to have a lower power dissipation than conventional BJT, due to its lower switching loss and faster on-state time. When the gate voltage (VGS) is lower than the threshold voltage (VGF) then the IGBT module is in the off-state, while when VGS is higher than the threshold voltage then the device is in the on-state. The on-state voltage drop is quite low, making it efficient for various power electronics applications.In conclusion, the FS100R12KE3_B3 IGBT module is a good choice for various power electronics applications due to its low on-state voltage drop, high switching speed, and fast turn-on characteristics. Its reverse recovery characteristics and ability to switch high currents rapidly make it suitable for high power applications, making it an extremely versatile component in this field.The specific data is subject to PDF, and the above content is for reference
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