Allicdata Part #: | FS100R12KT4GB11BOSA1-ND |
Manufacturer Part#: |
FS100R12KT4GB11BOSA1 |
Price: | $ 99.44 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 600V 100A |
More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
DataSheet: | FS100R12KT4GB11BOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 90.39590 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 100A |
Power - Max: | 515W |
Vce(on) (Max) @ Vge, Ic: | 2.2V @ 15V, 100A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 6.3nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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A FS100R12KT4GB11BOSA1 module is an insulated-gate bipolar transistor (IGBT) module. IGBTs are components of power semiconductor devices and are used for media and power applications. The FS100R12KT4GB11BOSA1 is a 12 kV type IGBT module that is designed to operate under high voltages and temperature ranges. It is commonly used in motor drives, power controllers, renewable energy applications, digital power supplies, and induction heating systems.
The FS100R12KT4GB11BOSA1 module utilizes a three-terminal topology of the emitter, collector, and gate terminals. Additionally, the module includes two main components, an insulated gate FET and a bipolar transistor, which work together to control the switching of large currents while dissipating very little power. The insulated gate FET functions as the switch to control the voltage, while the bipolar transistor regulates the current flow. This combination of components offers high levels of efficiency, stable performance, and safety.
The FS100R12KT4GB11BOSA1 module is designed for use in medium and high-voltage applications up to 12 kV. It is available in several configurations, including the ZIPIMSB type (Insulated Gate Bipolar Transistor Module) and FTRLIMSB type (Insulated Gate Controller FET Module). It has a wide range of operating temperatures, from -55 to +125°C. In addition, it is designed to withstand transient overvoltages of up to 12 kV on the collector side and up to 6 kV on the emitter side. It also features a low gate drive power at 3.3V, making the module suitable for a variety of power electronic applications.
The FS100R12KT4GB11BOSA1 module is used in many applications, including motor drives, digital power supplies, power controllers, induction heating systems, renewable energy applications, and more. It provides a stable and efficient operation in motor drives by controlling the switching of large currents while dissipating very little power. It also features high efficiency and voltage and temperature ratings, making it suitable for use in renewable energy applications. It can also be used in digital power supplies, as it is designed to handle transient overvoltages and can withstand a wide range of operating temperatures. Finally, it can be used in induction heating systems, as it is able to efficiently and reliably control the switching of large currents.
The FS100R12KT4GB11BOSA1 module is a high-performance IGBT module designed for medium and high-voltage applications up to 12 kV. It is available in several configurations and offers a high level of efficiency and stable performance. Its combination of insulated gate FET and bipolar transistor, wide temperature range, and ability to handle transient overvoltages make it suitable for a variety of power electronic applications, including motor drives, power controllers, digital power supplies, renewable energy applications, and induction heating systems.
The specific data is subject to PDF, and the above content is for reference
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