FS100R12KT4GBOSA1 Allicdata Electronics
Allicdata Part #:

FS100R12KT4GBOSA1-ND

Manufacturer Part#:

FS100R12KT4GBOSA1

Price: $ 98.38
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULE VCES 600V 100A
More Detail: IGBT Module Trench Field Stop Three Phase Inverter...
DataSheet: FS100R12KT4GBOSA1 datasheetFS100R12KT4GBOSA1 Datasheet/PDF
Quantity: 1000
10 +: $ 89.42850
Stock 1000Can Ship Immediately
$ 98.38
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 100A
Power - Max: 515W
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 6.3nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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FS100R12KT4GBOSA1 is a type of insulated gate bipolar transistor (IGBT) module, which belongs to the Transistors family. It is a field-effect transistor with a four-layer punch-through construction and is used to switch and control electrical power. Its characteristic features an excellent combination of low conduction and low switching losses.

A typical application field of the FS100R12KT4GBOSA1 is low frequency motor control, which includes AC motor drives, brushless DC motor drives, and motor soft starters. Its main purpose is to control the power dissipation in AC motors, while also allowing the motor to run efficiently and smoothly at a limited speed. Additionally, it is used in a wide range of other applications such as solar inverters, general purpose inverters, industrial drives, lighting devices, and various other power electronics applications.

The working principle of FS100R12KT4GBOSA1 is based on its three-terminal devices configuration. It consists of two junction field-effect transistors (JFETs), which are connected in parallel with each junction region forming a controlled gate which can turned on or off. The JFETs can be switched by a source voltage applied to the gate terminal. An alternating current is applied to the anode and cathode terminals, which results in the injective-type switching of the JFETs. If the current is low, the JFETs remain off and if the current is large, the JFETs remain on.

The unique design of FS100R12KT4GGBOSA1 gives it excellent linearity, low switching losses and high reliability. Additionally, its easy-to-assemble design makes it fast and easy to install and use. It is also designed to be robust and withstand frequent operation in high-intensity applications. The module is designed to handle a wide range of voltage inputs and can be used in any environment.

In conclusion, the FS100R12KT4GBOSA1 IGBT module is an excellent choice for high performance applications that require excellent linearity, low switching losses, and high reliability. It is suitable for use in a wide range of applications including motor control, inverters, lighting, and industrial drives. Additionally, its easy-to-assemble design makes it easy to install and use, while its robustness ensures that it is suitable for any environment.

The specific data is subject to PDF, and the above content is for reference

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