FZ1200R12HP4HOSA2 Allicdata Electronics
Allicdata Part #:

FZ1200R12HP4HOSA2-ND

Manufacturer Part#:

FZ1200R12HP4HOSA2

Price: $ 429.95
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MODULE IGBT IHMB130-2
More Detail: IGBT Module Trench Single Switch 1200V 1790A 7150W...
DataSheet: FZ1200R12HP4HOSA2 datasheetFZ1200R12HP4HOSA2 Datasheet/PDF
Quantity: 1000
2 +: $ 390.85500
Stock 1000Can Ship Immediately
$ 429.95
Specifications
Series: --
Part Status: Active
IGBT Type: Trench
Configuration: Single Switch
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 1790A
Power - Max: 7150W
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1200A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 74nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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FZ1200R12HP4HOSA2 Application Field and Working Principle

The FZ1200R12HP4HOSA2 is an insulated-gate bipolar transistor (IGBT) module, an electronic device composed of multiple interconnected transistors. It is widely used in power electronics applications such as variable speed drives, power supplies, motor drives and lighting control. This article examines the application field of the FZ1200R12HP4HOSA2 module and its working principle.

Application Field

The FZ1200R12HP4HOSA2 module is most commonly used in variable-speed drives, where it helps to control the speed of a motor. It can be used to control the speed of AC induction motors from 0 to 4500 rpm with excellent precision. The FZ1200R12HP4HOSA2 module is also suitable for other applications, such as solar energy storage, renewable energy conversion, robotics, automated production lines and other motor control applications. It is also increasingly used in LED lighting and display control, as well as in furnace automation.

The FZ1200R12HP4HOSA2 module is designed to deliver maximum efficiency at a minimum cost. It offers excellent performance at a very competitive price, making it a popular choice for a wide range of applications. Its thermal performance and energy efficiency have been improved, with an insulated-gate bipolar transistor structure that helps to ensure reliable switching operations and cost savings.

Working Principle

The FZ1200R12HP4HOSA2 module is a three-phase, 1200 V insulated-gate bipolar transistor (IGBT) module. It uses the latest IGBT technology combined with advanced gate drive circuit design, which provides the best performance at high frequency switching. The FZ1200R12HP4HOSA2 module is designed to handle high power levels in highly efficient power control applications. It has excellent thermal performance, providing high levels of reliability while also reducing operating costs.

The FZ1200R12HP4HOSA2 module works by controlling the current flow through a series of IGBT transistors. It is a three-phase power device, which means that it can be connected to three phases of an AC signal. The IGBT transistors act as switches, allowing for precise control of the power signal. It also offers over-temperature protection and short-circuit protection, ensuring the device is reliable and safe to use.

The FZ1200R12HP4HOSA2 module has a high-speed switching frequency, allowing for quick and precise control. The switching frequency is adjustable and can be programmed according to the specific application requirements. It also offers a high-rating DC bus voltage, meaning that it can be operated from a wide input voltage range, making it perfect for a variety of application requirements.

In conclusion, the FZ1200R12HP4HOSA2 is an excellent IGBT module for a wide range of applications, offering excellent thermal performance, efficiency, and cost-effectiveness. Its adjustable switching frequency, high-rating DC bus voltage, and high power delivery make it a popular choice for many power electronics applications.

The specific data is subject to PDF, and the above content is for reference

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