FZ1200R12KF4NOSA1 Allicdata Electronics
Allicdata Part #:

FZ1200R12KF4NOSA1-ND

Manufacturer Part#:

FZ1200R12KF4NOSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULE 1200V 1200A
More Detail: IGBT Module
DataSheet: FZ1200R12KF4NOSA1 datasheetFZ1200R12KF4NOSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: *
Part Status: Obsolete
Description

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FZ1200R12KF4NOSA1 is an insulated gate bipolar transistor (IGBT) module commonly used in a wide range of applications. It is a high-performance device providing excellent switching performance, fast turn-off and good circuit current density. In addition, its low on-state voltage, low power losses, high EMC performance and a robust design make it suitable for a variety of applications.

FZ1200R12KF4NOSA1 is suitable for pulse power supplies, dc-dc converters, variable speed drives, renewable energy generators and other similar electronic applications. It can be used in applications that require high efficiency and power conversion, such as high-speed drive motors or high-power industrial automation equipment. It can also be used in applications that need reliable and stiff switching performance, such as household appliances.

FZ1200R12KF4NOSA1 is based on an IGBT technology which combines the characteristics of both bipolar and MOS transistors. It utilizes an insulated gate to reduce the on-state voltage while allowing excellent dynamic performance. The device features a robust design with an embedded diode, excellent thermal performance and isolation due to an insulated base plate and metal casing.

The working principle of FZ1200R12KF4NOSA1 is based on the operation of bipolar transistors. When the gate voltage is applied, current can flow between the collector and the emitter of the transistor, which produces the desired output. When the gate voltage is reduced, the current flow stops, thus preventing further conduction. Additionally, the high-speed switching performance of the device is due to its internal high-frequency switching elements.

FZ1200R12KF4NOSA1 is a device which offers a great combination of features and performance, making it suitable for many different applications. Its robust design ensures high reliability and long-term performance, while its quick switching capabilities make it suitable for high-power applications. Furthermore, its excellent EMC performance and low power losses make it suitable for use in power conversion systems and renewable energy systems.

The specific data is subject to PDF, and the above content is for reference

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