FZ1200R12HE4HOSA2

FZ1200R12HE4HOSA2 is a module with IGBT architecture specially designed for applications that range from traction inverter to welding machine, low and medium voltage choppers. It is a fully insulated gate bipolar transistor (IGBT) module featuring fast switching capabilities and improved performance over those available using the more conventional discrete components.

Features:

• Voltage Rated: 1200V
• Current Rated: 1200A
• Multi-chip and single chip available
• High frequency operation
• External gate resistance with low on-state voltage
• Low inductance design
• Low stray inductance
• Excellent current sharing capability

Application Field:

FZ1200R12HE4HOSA2 has a wide range of applications for its excellent features. It is a qualified and reliable solution for applications including but not limited to the following fields:

• Traction Inverters: It is widely used in traction inverters due to its fast switching properties, resulting in high efficiency and low operating costs.
• Welding Machines: As a qualified and reliable solution, FZ1200R12HE4HOSA2 is used in welding machines to control the current and voltage precisely while preserving the welding properties of the material.
• Choppers: FZ1200R12HE4HOSA2 is used in low and medium voltage choppers to make sure that the current and voltage is stabilized and controlled to minimize losses.

Working Principle:

FZ1200R12HE4HOSA2 has an insulated gate bipolar transistor (IGBT) working structure. This technology offers several advantages that make it suitable for a wide range of applications. IGBTs use a semiconductor material to combine the driving characteristics of a gate turn-off thyristor and the low saturation voltage capability of a bipolar transistor. As a result, IGBTs are more robust, efficient and easy to design with when compared to the more traditional technologies.

In short, the working principle of FZ1200R12HE4HOSA2 is based on the IGBT technology which combines a semiconductor material with the driving characteristics of a gate turn-off thyristor and the low saturation voltage capability of a bipolar transistor to result in a robust, efficient and easy control module.