Allicdata Part #: | FZ1200R33KF2CNOSA1-ND |
Manufacturer Part#: |
FZ1200R33KF2CNOSA1 |
Price: | $ 1.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MODULE IGBT A-IHV190-3 |
More Detail: | IGBT Module Full Bridge 3300V 2000A 14500W Chassi... |
DataSheet: | FZ1200R33KF2CNOSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 1.26000 |
Series: | -- |
Part Status: | Active |
IGBT Type: | -- |
Configuration: | Full Bridge |
Voltage - Collector Emitter Breakdown (Max): | 3300V |
Current - Collector (Ic) (Max): | 2000A |
Power - Max: | 14500W |
Vce(on) (Max) @ Vge, Ic: | 4.25V @ 15V, 1200A |
Current - Collector Cutoff (Max): | 12mA |
Input Capacitance (Cies) @ Vce: | 150nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FZ1200R33KF2CNOSA1 is a type of insulated gate bipolar transistor (IGBT) module which is used in many applications. It is manufactured by a company called FUJI which has a long history of manufacturing quality products. The module comprises of an integrated circuit package which contains an insulated gate bipolar transistor, an MOS technology normally-off switch, a current sensing resistor and other electronic components. The device is specifically designed for low voltage operation to provide an efficient and reliable power supply solution.
The FZ1200R33KF2CNOSA1 is mainly used in power electronic applications such as motor drives, renewable energy systems, instrumentation, and power conversion systems. Its applications are also found in AC and DC motor control, tractive inverters, AC and DC energy converters, and AC to DC inverters. It is used in various motor control applications such as servo drives and vehicle motor control.
The FZ1200R33KF2CNOSA1 is designed for robustness, operational stability and maximum performance. It offers high current capability, high voltage protection, low power loss, and protection from thermal runaway. It is an advanced module which offers improved performance and better durability compared to other modules. The device features an easy to install design that facilitates rapid replacement and repair in case of failure. It also has a wide operating temperature range that enables it to withstand higher ambient temperatures.
The FZ1200R33KF2CNOSA1 has a working principle which is based on the Gate Turn-Off (GTO) technology which switches the power at every cycle of operation with high accuracy. When the power is switched, a small current is generated in the GTO which triggers the internal MOSFET drive circuit. This MOSFET drive circuit controls the IGBT switch and its voltage to turn conduction off or on. The device is able to withstand high surge current in case of an overload situation.
The FZ1200R33KF2CNOSA1 is an ideal solution for power electronic applications due to its high performance and reliability. It is designed for high current and voltage applications, and can be seamlessly integrated into a wide range of power electronic systems. The device is easy to install, and offers excellent durability for long-term use. The device is available in different package sizes to suit all kinds of applications, and can be easily modified to meet specific needs.
The specific data is subject to PDF, and the above content is for reference
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