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Transistors - IGBTs - Modules

The FZ1200R12KF5NDSA1 is a high-performance insulated-gate bipolar transistor (IGBT) module made by Fuji Electric. It has a rating of 1200V and its current rating is 1200A. It is a highly efficient modular solution for a range of medium- to high-power applications. The IGBT module is capable of controlling and managing power in a wide range of systems from motor drives to solar inverters, chargers, and uninterruptible power supplies (UPS systems).

Applications

The FZ1200R12KF5NDSA1 is ideally suited for a wide range of medium- to high-power applications in the industrial, energy, and transportation areas. It is used in motor drive systems, robots, and elevators. For medium-power applications, it can be used in solar inverters and street light controllers. It is also used in chargers and UPS systems. Other applications include induction heating, HVDC, reactive power compensation, and railroad systems.

Working Principle

IGBTs are insulated-gate bipolar transistors which combine the low on-state losses of conventional bipolar transistors and the high switching speeds of MOSFETs. The FZ1200R12KF5NDSA1 works on the principle of current conduction through a highly doped layer of silicon between two source electrodes. When a positive gate voltage is applied to the control gate, carriers are attracted towards and injected into the material, creating a conducting channel between the two source electrodes. The intensity of the current conducted through the material depends on the strength of the gate voltage. By varying the gate voltage, the current conduction can be controlled to get desired results.

The FZ1200R12KF5NDSA1 has excellent low-on state losses, high switching speeds and reliable active current steering for improved thermal characteristics and noise reduction. It is designed for soft switching, providing smooth and sinusoidal waveforms that result in reduced EMI/RFI and optimized efficiency. Its dielectric strength, thermal sustainable operation and base plate design also guarantee safe and dependable operation.

Conclusion

The FZ1200R12KF5NDSA1 is a high-performance IGBT module with a rating of 1200V and current rating of 1200A. It is suitable for a range of medium- to high-power applications in the industrial, energy, and transportation areas, such as motor drives, solar inverters, chargers, and UPS systems. It works on the principle of current conduction through a highly doped layer of silicon between two source electrodes and the intensity of the current conducted through the material depends on the strength of the gate voltage. It has excellent low-on state losses, high switching speeds and reliable active current steering for improved thermal characteristics and noise reduction.

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