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Introduction

FZ1200R17HE4HOSA2 are a type of IGBT module, which stands for Insulated Gate Bipolar Transistor. It is a module specifically designed for use in electric drives, and is manufactured by Infineon Technologies. The FZ1200R17HE4HOSA2 easily stands out from other IGBT modules due to its 600A output current and high surge and peak current capability.

Application Fields

The FZ1200R17HE4HOSA2 IGBT module is frequently applied in a wide array of applications due to its high power capabilities. It is typically used in motor drive applications, such as electric drives, robots, escalators, elevators and electrical vehicles. Furthermore, its output current of 600A supports a wide range of voltages, making it a versatile and reliable device.

Design

The FZ1200R17HE4HOSA2 comes with an insulated gate, a common feature among IGBT modules. The insulated gate helps to reduce switching losses, allows for a higher switching frequency, and provides a relatively low gate resistance. Furthermore, the module has a low thermal resistance of 4.0 K/W, increasing its efficiency and durability.

Working Principle

As with many IGBTs, the FZ1200R17HE4HOSA2 works by using voltage to control its current conduction. IGBTs are composed of two transistors: an n-channel and p-channel MOSFET. When the gate voltage is greater than the threshold voltage (Vth), the n-channel MOSFET starts to conduct electrons, while the p-channel MOSFET starts to cut off. This combination allows for a large current to flow through the switch, which is controlled by the gate voltage.

Conclusion

The FZ1200R17HE4HOSA2 IGBT module is a cutting-edge device that can help to power a wide range of electric drives. Due to its 600A current output, low thermal resistance, and insulated gates, this IGBT module is a reliable and power-efficient solution for many applications.

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