FZ1200R33KL2CNOSA1

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FZ1200R33KL2CNOSA1 is an insulated gate bipolar transistor (IGBT) module. Its high switching speed, low on-state losses, low profile and robust design make it ideal for a wide range of industrial and automotive applications. FZ1200R33KL2CNOSA1 is part of the Fairchild Semiconductor FZ family, offering reliable IGBT solutions.

An IGBT is a three-terminal power semiconductor device and a member of the family of bi-directional switches. It consists of two sections, the input gate and a vertical power transistor. The gate is used to control the opening and closing of the transistor. When the gate current is small, the switch remains closed, or off, and there is no current flowing from the collector to the emitter. Conversely, when the gate current is high, the transistor opens and current flows from the collector to the emitter.

FZ1200R33KL2CNOSA1 provides a maximum on-state voltage of 1200V and a maximum collector current of 33A. It also features a high isolation voltage (2500V) as well as a short turn-on and turn-off time. This makes it suitable for applications such as motor control, UPS systems, welding machines, construction machineries, and heating elements.

The FZ1200R33KL2CNOSA1 module is designed for versatility, easy integration and simplified manufacturing. It has a low profile, which allows for the direct cooling of the module in the application, and its built-in fast-recovery free-wheeling diode can be omitted, thus reducing the overall costs. Its robust construction helps to withstand shock, vibration, and EMI noise, allowing it to operate reliably as part of an industrial application.

FZ1200R33KL2CNOSA1 is a durable and cost-effective solution for a range of industrial and automotive applications. It offers high switching speed, low on-state losses, low profile, and robust construction, providing reliable performance and ease of integration.

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